JPS55143047A - Insulating separation method for semiconductor device - Google Patents
Insulating separation method for semiconductor deviceInfo
- Publication number
- JPS55143047A JPS55143047A JP5123279A JP5123279A JPS55143047A JP S55143047 A JPS55143047 A JP S55143047A JP 5123279 A JP5123279 A JP 5123279A JP 5123279 A JP5123279 A JP 5123279A JP S55143047 A JPS55143047 A JP S55143047A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- channel
- films
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000926 separation method Methods 0.000 title 1
- 108091006146 Channels Proteins 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5123279A JPS55143047A (en) | 1979-04-25 | 1979-04-25 | Insulating separation method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5123279A JPS55143047A (en) | 1979-04-25 | 1979-04-25 | Insulating separation method for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55143047A true JPS55143047A (en) | 1980-11-08 |
| JPS6228579B2 JPS6228579B2 (enrdf_load_stackoverflow) | 1987-06-22 |
Family
ID=12881191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5123279A Granted JPS55143047A (en) | 1979-04-25 | 1979-04-25 | Insulating separation method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55143047A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5972740A (ja) * | 1982-10-19 | 1984-04-24 | Nec Corp | 半導体集積回路装置およびその製造方法 |
| JPS6083348A (ja) * | 1983-10-14 | 1985-05-11 | Hitachi Ltd | 半導体集積回路装置 |
| US4968640A (en) * | 1987-02-10 | 1990-11-06 | Industrial Technology Research Institute | Isolation structures for integrated circuits |
| JPH04116932A (ja) * | 1990-09-07 | 1992-04-17 | Mitsubishi Electric Corp | 半導体装置 |
| US5348910A (en) * | 1991-12-24 | 1994-09-20 | Seiko Epson Corporation | Method of manufacturing a semiconductor device and the product thereby |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142982A (en) * | 1975-05-05 | 1976-12-08 | Intel Corp | Method of producing single crystal silicon ic |
-
1979
- 1979-04-25 JP JP5123279A patent/JPS55143047A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142982A (en) * | 1975-05-05 | 1976-12-08 | Intel Corp | Method of producing single crystal silicon ic |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5972740A (ja) * | 1982-10-19 | 1984-04-24 | Nec Corp | 半導体集積回路装置およびその製造方法 |
| JPS6083348A (ja) * | 1983-10-14 | 1985-05-11 | Hitachi Ltd | 半導体集積回路装置 |
| US4968640A (en) * | 1987-02-10 | 1990-11-06 | Industrial Technology Research Institute | Isolation structures for integrated circuits |
| JPH04116932A (ja) * | 1990-09-07 | 1992-04-17 | Mitsubishi Electric Corp | 半導体装置 |
| US5348910A (en) * | 1991-12-24 | 1994-09-20 | Seiko Epson Corporation | Method of manufacturing a semiconductor device and the product thereby |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6228579B2 (enrdf_load_stackoverflow) | 1987-06-22 |
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