JPS6228579B2 - - Google Patents
Info
- Publication number
- JPS6228579B2 JPS6228579B2 JP54051232A JP5123279A JPS6228579B2 JP S6228579 B2 JPS6228579 B2 JP S6228579B2 JP 54051232 A JP54051232 A JP 54051232A JP 5123279 A JP5123279 A JP 5123279A JP S6228579 B2 JPS6228579 B2 JP S6228579B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- polycrystalline silicon
- region
- source
- channel stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5123279A JPS55143047A (en) | 1979-04-25 | 1979-04-25 | Insulating separation method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5123279A JPS55143047A (en) | 1979-04-25 | 1979-04-25 | Insulating separation method for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55143047A JPS55143047A (en) | 1980-11-08 |
JPS6228579B2 true JPS6228579B2 (enrdf_load_stackoverflow) | 1987-06-22 |
Family
ID=12881191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5123279A Granted JPS55143047A (en) | 1979-04-25 | 1979-04-25 | Insulating separation method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55143047A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5972740A (ja) * | 1982-10-19 | 1984-04-24 | Nec Corp | 半導体集積回路装置およびその製造方法 |
JPS6083348A (ja) * | 1983-10-14 | 1985-05-11 | Hitachi Ltd | 半導体集積回路装置 |
US4968640A (en) * | 1987-02-10 | 1990-11-06 | Industrial Technology Research Institute | Isolation structures for integrated circuits |
JPH04116932A (ja) * | 1990-09-07 | 1992-04-17 | Mitsubishi Electric Corp | 半導体装置 |
KR0159532B1 (ko) * | 1991-12-24 | 1999-02-01 | 아이자와 스스무 | 반도체장치의 제조방법 및 반도체장치 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51142982A (en) * | 1975-05-05 | 1976-12-08 | Intel Corp | Method of producing single crystal silicon ic |
-
1979
- 1979-04-25 JP JP5123279A patent/JPS55143047A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55143047A (en) | 1980-11-08 |