JPS6228579B2 - - Google Patents

Info

Publication number
JPS6228579B2
JPS6228579B2 JP54051232A JP5123279A JPS6228579B2 JP S6228579 B2 JPS6228579 B2 JP S6228579B2 JP 54051232 A JP54051232 A JP 54051232A JP 5123279 A JP5123279 A JP 5123279A JP S6228579 B2 JPS6228579 B2 JP S6228579B2
Authority
JP
Japan
Prior art keywords
oxide film
polycrystalline silicon
region
source
channel stopper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54051232A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55143047A (en
Inventor
Nobuhiro Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5123279A priority Critical patent/JPS55143047A/ja
Publication of JPS55143047A publication Critical patent/JPS55143047A/ja
Publication of JPS6228579B2 publication Critical patent/JPS6228579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP5123279A 1979-04-25 1979-04-25 Insulating separation method for semiconductor device Granted JPS55143047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5123279A JPS55143047A (en) 1979-04-25 1979-04-25 Insulating separation method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5123279A JPS55143047A (en) 1979-04-25 1979-04-25 Insulating separation method for semiconductor device

Publications (2)

Publication Number Publication Date
JPS55143047A JPS55143047A (en) 1980-11-08
JPS6228579B2 true JPS6228579B2 (enrdf_load_stackoverflow) 1987-06-22

Family

ID=12881191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5123279A Granted JPS55143047A (en) 1979-04-25 1979-04-25 Insulating separation method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS55143047A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972740A (ja) * 1982-10-19 1984-04-24 Nec Corp 半導体集積回路装置およびその製造方法
JPS6083348A (ja) * 1983-10-14 1985-05-11 Hitachi Ltd 半導体集積回路装置
US4968640A (en) * 1987-02-10 1990-11-06 Industrial Technology Research Institute Isolation structures for integrated circuits
JPH04116932A (ja) * 1990-09-07 1992-04-17 Mitsubishi Electric Corp 半導体装置
KR0159532B1 (ko) * 1991-12-24 1999-02-01 아이자와 스스무 반도체장치의 제조방법 및 반도체장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142982A (en) * 1975-05-05 1976-12-08 Intel Corp Method of producing single crystal silicon ic

Also Published As

Publication number Publication date
JPS55143047A (en) 1980-11-08

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