JPH058571B2 - - Google Patents

Info

Publication number
JPH058571B2
JPH058571B2 JP57082476A JP8247682A JPH058571B2 JP H058571 B2 JPH058571 B2 JP H058571B2 JP 57082476 A JP57082476 A JP 57082476A JP 8247682 A JP8247682 A JP 8247682A JP H058571 B2 JPH058571 B2 JP H058571B2
Authority
JP
Japan
Prior art keywords
polysilicon
forming
film
mask
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57082476A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58200576A (ja
Inventor
Ken Koa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57082476A priority Critical patent/JPS58200576A/ja
Publication of JPS58200576A publication Critical patent/JPS58200576A/ja
Publication of JPH058571B2 publication Critical patent/JPH058571B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP57082476A 1982-05-18 1982-05-18 Ｍｏｓ型電界効果トランジスタの製造方法 Granted JPS58200576A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57082476A JPS58200576A (ja) 1982-05-18 1982-05-18 Ｍｏｓ型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57082476A JPS58200576A (ja) 1982-05-18 1982-05-18 Ｍｏｓ型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58200576A JPS58200576A (ja) 1983-11-22
JPH058571B2 true JPH058571B2 (enrdf_load_stackoverflow) 1993-02-02

Family

ID=13775562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57082476A Granted JPS58200576A (ja) 1982-05-18 1982-05-18 Ｍｏｓ型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58200576A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2654258A1 (fr) * 1989-11-03 1991-05-10 Philips Nv Procede pour fabriquer un dispositif a transistor mis ayant une electrode de grille en forme de "t" inverse.
US5177027A (en) * 1990-08-17 1993-01-05 Micron Technology, Inc. Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path
US5210435A (en) * 1990-10-12 1993-05-11 Motorola, Inc. ITLDD transistor having a variable work function

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126957A (en) * 1980-03-11 1981-10-05 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS58200576A (ja) 1983-11-22

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