JPS55138275A - Semiconductor device for high power - Google Patents

Semiconductor device for high power

Info

Publication number
JPS55138275A
JPS55138275A JP17362079A JP17362079A JPS55138275A JP S55138275 A JPS55138275 A JP S55138275A JP 17362079 A JP17362079 A JP 17362079A JP 17362079 A JP17362079 A JP 17362079A JP S55138275 A JPS55138275 A JP S55138275A
Authority
JP
Japan
Prior art keywords
electrode
deterioration
electrodes
thermal expansion
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17362079A
Other languages
Japanese (ja)
Other versions
JPS5651507B2 (en
Inventor
Takashi Mimura
Masumi Fukuda
Hiroichi Matayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17362079A priority Critical patent/JPS55138275A/en
Publication of JPS55138275A publication Critical patent/JPS55138275A/en
Publication of JPS5651507B2 publication Critical patent/JPS5651507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a highly reliable Al electrode of semiconductor for high power by a method wherein an electrode is made by putting an Al layer on a metal layer of large atomic weight which comes in contact with layers of base and emitter, and is extended to the upper part of a protective film, and its side faces are covered with insulators. CONSTITUTION:The deterioration of Al electrode, like the breaking of wire when series of pulses are applied to the electrode, etc., is due mainly to the thermal expansion of electrode irrelevant to current density, and the mean fault time due to the deterioration of electrode is inversely proportional to the coefficient of thermal expansion of electrode metal made in thin film state. Therefore, when Al electrodes 6 are completely covered by covering the upper faces and side faces of Al electrodes on bases 2 and emitters 3 with an insulator 7, and layers 5 of W or Mo, etc., are prepared under the lower face, the thermal expansion of Al electrodes are suppressed forcibly and the deterioration by deformation is remarkably reduced to prevent the deterioration almost semipermanently.
JP17362079A 1979-12-28 1979-12-28 Semiconductor device for high power Granted JPS55138275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17362079A JPS55138275A (en) 1979-12-28 1979-12-28 Semiconductor device for high power

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17362079A JPS55138275A (en) 1979-12-28 1979-12-28 Semiconductor device for high power

Publications (2)

Publication Number Publication Date
JPS55138275A true JPS55138275A (en) 1980-10-28
JPS5651507B2 JPS5651507B2 (en) 1981-12-05

Family

ID=15963982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17362079A Granted JPS55138275A (en) 1979-12-28 1979-12-28 Semiconductor device for high power

Country Status (1)

Country Link
JP (1) JPS55138275A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783787A (en) * 2017-01-24 2017-05-31 东莞市阿甘半导体有限公司 Electrode for chip package and the chip-packaging structure using the electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783787A (en) * 2017-01-24 2017-05-31 东莞市阿甘半导体有限公司 Electrode for chip package and the chip-packaging structure using the electrode

Also Published As

Publication number Publication date
JPS5651507B2 (en) 1981-12-05

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