JPS5688360A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5688360A
JPS5688360A JP16601579A JP16601579A JPS5688360A JP S5688360 A JPS5688360 A JP S5688360A JP 16601579 A JP16601579 A JP 16601579A JP 16601579 A JP16601579 A JP 16601579A JP S5688360 A JPS5688360 A JP S5688360A
Authority
JP
Japan
Prior art keywords
type
region
thyristor
layer
becoming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16601579A
Other languages
Japanese (ja)
Other versions
JPS6023508B2 (en
Inventor
Kenichi Yamanaka
Toshio Sogo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16601579A priority Critical patent/JPS6023508B2/en
Publication of JPS5688360A publication Critical patent/JPS5688360A/en
Publication of JPS6023508B2 publication Critical patent/JPS6023508B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a heat-sensitive thyristor having preferable surge resistance and dv/dt characteristic by adding an auxiliary thyristor to a main thyristor, forming a defective crystalline layer on the surface of an N type base between both P type bases and utilizing the expansion of a depletion layer due to applied voltage thereto. CONSTITUTION:An N type layer 2 becoming a base is epitaxially grown on a P type Si substrate 1 becoming anode, and is formed to be insular by an isolating region 7. Then, a main thyristor 100 having a P type base region 3 formed in the layer 2 becoming insular and an N type cathode region 4 disposed therein is formed therein, and an auxiliary thyristor having a P type base region 8 and an N type cathode region 9 disposed at a predetermined interval therebetween is formed therein. Thereafter, defective crystalline region 10 is intentionally formed by Ar<+> ion implantation or the like between the thyristors 100 and 200, the depletion layers 14, 13 are expanded at the time of applying voltage thereto, and the characteristics thereof can be improved.
JP16601579A 1979-12-19 1979-12-19 semiconductor equipment Expired JPS6023508B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16601579A JPS6023508B2 (en) 1979-12-19 1979-12-19 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16601579A JPS6023508B2 (en) 1979-12-19 1979-12-19 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5688360A true JPS5688360A (en) 1981-07-17
JPS6023508B2 JPS6023508B2 (en) 1985-06-07

Family

ID=15823320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16601579A Expired JPS6023508B2 (en) 1979-12-19 1979-12-19 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6023508B2 (en)

Also Published As

Publication number Publication date
JPS6023508B2 (en) 1985-06-07

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