JPS6459824A - Pressure-contact type semiconductor device - Google Patents
Pressure-contact type semiconductor deviceInfo
- Publication number
- JPS6459824A JPS6459824A JP21541487A JP21541487A JPS6459824A JP S6459824 A JPS6459824 A JP S6459824A JP 21541487 A JP21541487 A JP 21541487A JP 21541487 A JP21541487 A JP 21541487A JP S6459824 A JPS6459824 A JP S6459824A
- Authority
- JP
- Japan
- Prior art keywords
- thermal
- stress buffer
- buffer sheet
- electrodes
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To eliminate contact resistance existing among many electrodes and a thermal-stress buffer sheet by a method wherein the many electrodes of a semiconductor substrate existing on an identical face of the semiconductor substrate is alloy-bonded to the comparatively thin thermal-stress buffer sheet whose coefficient of thermal expansion is nearly equal to that of the semiconductor substrate. CONSTITUTION:On an anode-side main face of a substrate 1 where a p-n junction has been formed on a silicon single-crystal sheet, an anode-side thermal- stress buffer sheet 7 composed of a metal whose coefficient of thermal expansion is nearly equal to that of silicon is alloy-bonded to a metal thin film 2 such as Al or the like. On a cathode-side main face of the substrate 1, an ohmic contact metal thin film used as strip-shaped cathode electrodes 3 and gate electrodes 4 is formed. A first cathode-side thermal-stress buffer sheet 5 which is composed of a material identical to that of the anode-side thermal-stress buffer sheet 7 and which is thinner than the sheet is alloy-bonded uniformly to the many cathode electrodes 3 which are arranged on the same face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21541487A JPS6459824A (en) | 1987-08-31 | 1987-08-31 | Pressure-contact type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21541487A JPS6459824A (en) | 1987-08-31 | 1987-08-31 | Pressure-contact type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6459824A true JPS6459824A (en) | 1989-03-07 |
Family
ID=16671934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21541487A Pending JPS6459824A (en) | 1987-08-31 | 1987-08-31 | Pressure-contact type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6459824A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5428229A (en) * | 1991-04-23 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Pressure contact type MOS semiconductor device and fabrication method of the same |
| EP0701288A2 (en) * | 1994-09-07 | 1996-03-13 | Ngk Insulators, Ltd. | Semiconductor device and method of manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680140A (en) * | 1979-12-05 | 1981-07-01 | Hitachi Ltd | Semiconductor device |
| JPS6193636A (en) * | 1984-10-15 | 1986-05-12 | Toshiba Corp | Semiconductor device |
| JPS61136269A (en) * | 1984-12-07 | 1986-06-24 | Hitachi Ltd | Semiconductor device |
-
1987
- 1987-08-31 JP JP21541487A patent/JPS6459824A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680140A (en) * | 1979-12-05 | 1981-07-01 | Hitachi Ltd | Semiconductor device |
| JPS6193636A (en) * | 1984-10-15 | 1986-05-12 | Toshiba Corp | Semiconductor device |
| JPS61136269A (en) * | 1984-12-07 | 1986-06-24 | Hitachi Ltd | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5428229A (en) * | 1991-04-23 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Pressure contact type MOS semiconductor device and fabrication method of the same |
| EP0701288A2 (en) * | 1994-09-07 | 1996-03-13 | Ngk Insulators, Ltd. | Semiconductor device and method of manufacturing the same |
| EP0701288A3 (en) * | 1994-09-07 | 1998-08-12 | Ngk Insulators, Ltd. | Semiconductor device and method of manufacturing the same |
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