JPS55127557A - Photomask and production thereof - Google Patents
Photomask and production thereofInfo
- Publication number
- JPS55127557A JPS55127557A JP3473179A JP3473179A JPS55127557A JP S55127557 A JPS55127557 A JP S55127557A JP 3473179 A JP3473179 A JP 3473179A JP 3473179 A JP3473179 A JP 3473179A JP S55127557 A JPS55127557 A JP S55127557A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- film
- produce
- pattern
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To produce a high accuracy photomask for manufacturing a semiconductor device while omitting an etching transfer process by blackening a desired pattern, with fluorinated plasma, obtained from a resist film formed on a transparent substrate. CONSTITUTION:A high molecular photosensitive resin such as polymethyl methacrylate is coated onto glass substrate 1 and baked to form resist film 2. After irradiating the desired resion of film 2 with electron beam 3 film 2 is developed by dipping in a developer such as a mixed solution of ethyl acetate and isoamyl acetate to obtain a desired pattern. This pattern is then exposed to fluorinated plasma 5 in a known plasma etching device, thus being blackened and hardened to produce a photomask.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3473179A JPS55127557A (en) | 1979-03-24 | 1979-03-24 | Photomask and production thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3473179A JPS55127557A (en) | 1979-03-24 | 1979-03-24 | Photomask and production thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55127557A true JPS55127557A (en) | 1980-10-02 |
Family
ID=12422450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3473179A Pending JPS55127557A (en) | 1979-03-24 | 1979-03-24 | Photomask and production thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55127557A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5136873A (en) * | 1974-09-19 | 1976-03-27 | Nippon Electric Co | |
JPS51111075A (en) * | 1975-03-26 | 1976-10-01 | Nec Corp | Photo etching photo mask |
-
1979
- 1979-03-24 JP JP3473179A patent/JPS55127557A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5136873A (en) * | 1974-09-19 | 1976-03-27 | Nippon Electric Co | |
JPS51111075A (en) * | 1975-03-26 | 1976-10-01 | Nec Corp | Photo etching photo mask |
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