JPS55147631A - Mask base material - Google Patents
Mask base materialInfo
- Publication number
- JPS55147631A JPS55147631A JP5647279A JP5647279A JPS55147631A JP S55147631 A JPS55147631 A JP S55147631A JP 5647279 A JP5647279 A JP 5647279A JP 5647279 A JP5647279 A JP 5647279A JP S55147631 A JPS55147631 A JP S55147631A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- layer
- base material
- mask base
- hydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To provide high quality to a mask base material for a photomask used in manufacture of LSI, etc. by using an Si or Ge layer or an Si-Ge mixed layer, as the shielding layer of the material, to which a III or V group element in the periodic table has been added. CONSTITUTION:When transparent substrate 21 is covered with Si-Ge layer 22 as a shielding layer, hydride of a III or V group element such as B or Ga is fed together with silicon hydride and germanium hydride using H2 gas as carrier to form mask base material 22 on glass substrate 21. After coating layer 22 with resist film 24 made of polymethyl methacrylate or the like a pattern is drawn with electron beams and developed to form resist pattern 25. Exposed film 22 is then etched selectively by reactive sputtering technique to form mask pattern 26, thus manufacturing photomask 27. This pattern is of high accuracy and free from pattern deformation due to electric charging in the electron beam drawing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5647279A JPS55147631A (en) | 1979-05-09 | 1979-05-09 | Mask base material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5647279A JPS55147631A (en) | 1979-05-09 | 1979-05-09 | Mask base material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55147631A true JPS55147631A (en) | 1980-11-17 |
Family
ID=13028039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5647279A Pending JPS55147631A (en) | 1979-05-09 | 1979-05-09 | Mask base material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55147631A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928156A (en) * | 1982-12-29 | 1984-02-14 | Konishiroku Photo Ind Co Ltd | Manufacture of exposure mask |
-
1979
- 1979-05-09 JP JP5647279A patent/JPS55147631A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928156A (en) * | 1982-12-29 | 1984-02-14 | Konishiroku Photo Ind Co Ltd | Manufacture of exposure mask |
JPH0548464B2 (en) * | 1982-12-29 | 1993-07-21 | Konishiroku Photo Ind |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55147631A (en) | Mask base material | |
JPS5249772A (en) | Process for production of semiconductor device | |
JPS57157247A (en) | Optical exposure mask | |
JPS5680133A (en) | Formation of pattern | |
JPS5461478A (en) | Chromium plate | |
JPS5339060A (en) | Lot number marking method to wafers | |
JPS55158635A (en) | Mask | |
JPS5772327A (en) | Formation of resist pattern | |
JPS5748731A (en) | Manufacture of mask | |
JPS55127557A (en) | Photomask and production thereof | |
JPS55143560A (en) | Manufacture of photomask | |
JPS5799371A (en) | Formation of resin film | |
JPS55163539A (en) | Photo mask | |
JPS5588057A (en) | Production of photo mask | |
JPS5616141A (en) | Transfer mask for x-ray exposure | |
JPS5555528A (en) | Mask aligner | |
JPS57109952A (en) | Production of photomask plate | |
JPS5794750A (en) | Formation of micropattern | |
JPS6430220A (en) | Alignment mark | |
JPS56144536A (en) | Pattern formation and p-n junction formation | |
JPS5741637A (en) | Microstep tablet | |
JPS5360177A (en) | Photo mask | |
JPS56133738A (en) | Forming method for pattern of photomask | |
JPS52100872A (en) | Fabrication of mask for x-ray exposure | |
JPS5741640A (en) | Photomask and its production, and pattern transfer method using said photomask |