JPS55127024A - Heat treatment for semiconductor substrate - Google Patents
Heat treatment for semiconductor substrateInfo
- Publication number
- JPS55127024A JPS55127024A JP3483279A JP3483279A JPS55127024A JP S55127024 A JPS55127024 A JP S55127024A JP 3483279 A JP3483279 A JP 3483279A JP 3483279 A JP3483279 A JP 3483279A JP S55127024 A JPS55127024 A JP S55127024A
- Authority
- JP
- Japan
- Prior art keywords
- consistency
- oxygen
- heat treatment
- wafer
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To control the generation of a stacking fault without the surface chapping by doing heat treatment for an Si wafer in the ambient atmosphere of an Ar gas having the consistency of oxygen within the specific range. The above is done before heat oxidizing process.
CONSTITUTION: Before doing heat treatment process for a single crystal Si wafer, heat treatment is done in the ambient atmosphere of an Ar gas, the consistency of oxygen in which is controlled within the range of 30 through 6,000ppm. Then high temperature treatment is done in an oxidized ambient atmosphere to form an oxidized film on the surface of the Si wafer. In this case, a rectangular pit will be generated if the consistency of oxygen in the Ar gas is 30ppm or less. And the partial growth of oxidized film will be noticed. On the other hand, both a pit and an oxidized film will not be generated if the consistency of oxygen is 30ppm or more and a clean mirror will be obtained. However, the effect of hindering a stacking fault will be eliminated in high consistency of oxygen over 6,000ppm.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3483279A JPS55127024A (en) | 1979-03-24 | 1979-03-24 | Heat treatment for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3483279A JPS55127024A (en) | 1979-03-24 | 1979-03-24 | Heat treatment for semiconductor substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55127024A true JPS55127024A (en) | 1980-10-01 |
JPS619735B2 JPS619735B2 (en) | 1986-03-25 |
Family
ID=12425165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3483279A Granted JPS55127024A (en) | 1979-03-24 | 1979-03-24 | Heat treatment for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55127024A (en) |
-
1979
- 1979-03-24 JP JP3483279A patent/JPS55127024A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS619735B2 (en) | 1986-03-25 |
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