JPS55127024A - Heat treatment for semiconductor substrate - Google Patents

Heat treatment for semiconductor substrate

Info

Publication number
JPS55127024A
JPS55127024A JP3483279A JP3483279A JPS55127024A JP S55127024 A JPS55127024 A JP S55127024A JP 3483279 A JP3483279 A JP 3483279A JP 3483279 A JP3483279 A JP 3483279A JP S55127024 A JPS55127024 A JP S55127024A
Authority
JP
Japan
Prior art keywords
consistency
oxygen
heat treatment
wafer
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3483279A
Other languages
Japanese (ja)
Other versions
JPS619735B2 (en
Inventor
Toshiharu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3483279A priority Critical patent/JPS55127024A/en
Publication of JPS55127024A publication Critical patent/JPS55127024A/en
Publication of JPS619735B2 publication Critical patent/JPS619735B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To control the generation of a stacking fault without the surface chapping by doing heat treatment for an Si wafer in the ambient atmosphere of an Ar gas having the consistency of oxygen within the specific range. The above is done before heat oxidizing process.
CONSTITUTION: Before doing heat treatment process for a single crystal Si wafer, heat treatment is done in the ambient atmosphere of an Ar gas, the consistency of oxygen in which is controlled within the range of 30 through 6,000ppm. Then high temperature treatment is done in an oxidized ambient atmosphere to form an oxidized film on the surface of the Si wafer. In this case, a rectangular pit will be generated if the consistency of oxygen in the Ar gas is 30ppm or less. And the partial growth of oxidized film will be noticed. On the other hand, both a pit and an oxidized film will not be generated if the consistency of oxygen is 30ppm or more and a clean mirror will be obtained. However, the effect of hindering a stacking fault will be eliminated in high consistency of oxygen over 6,000ppm.
COPYRIGHT: (C)1980,JPO&Japio
JP3483279A 1979-03-24 1979-03-24 Heat treatment for semiconductor substrate Granted JPS55127024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3483279A JPS55127024A (en) 1979-03-24 1979-03-24 Heat treatment for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3483279A JPS55127024A (en) 1979-03-24 1979-03-24 Heat treatment for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS55127024A true JPS55127024A (en) 1980-10-01
JPS619735B2 JPS619735B2 (en) 1986-03-25

Family

ID=12425165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3483279A Granted JPS55127024A (en) 1979-03-24 1979-03-24 Heat treatment for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS55127024A (en)

Also Published As

Publication number Publication date
JPS619735B2 (en) 1986-03-25

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