JPS55125651A - Production of semiconductor integrated circuit - Google Patents
Production of semiconductor integrated circuitInfo
- Publication number
- JPS55125651A JPS55125651A JP3373479A JP3373479A JPS55125651A JP S55125651 A JPS55125651 A JP S55125651A JP 3373479 A JP3373479 A JP 3373479A JP 3373479 A JP3373479 A JP 3373479A JP S55125651 A JPS55125651 A JP S55125651A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- layers
- resistance
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W20/01—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3373479A JPS55125651A (en) | 1979-03-22 | 1979-03-22 | Production of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3373479A JPS55125651A (en) | 1979-03-22 | 1979-03-22 | Production of semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55125651A true JPS55125651A (en) | 1980-09-27 |
| JPS6136705B2 JPS6136705B2 (cg-RX-API-DMAC10.html) | 1986-08-20 |
Family
ID=12394627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3373479A Granted JPS55125651A (en) | 1979-03-22 | 1979-03-22 | Production of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125651A (cg-RX-API-DMAC10.html) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5941870A (ja) * | 1982-08-25 | 1984-03-08 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5978560A (ja) * | 1982-10-26 | 1984-05-07 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法 |
| JPS59149045A (ja) * | 1983-02-16 | 1984-08-25 | Nec Corp | 半導体装置の製造方法 |
| US4935376A (en) * | 1989-10-12 | 1990-06-19 | At&T Bell Laboratories | Making silicide gate level runners |
| JPH0594963A (ja) * | 1990-08-16 | 1993-04-16 | Internatl Business Mach Corp <Ibm> | 集積回路の種々の厚さの耐火性金属シリサイド層を形成する方法 |
-
1979
- 1979-03-22 JP JP3373479A patent/JPS55125651A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5941870A (ja) * | 1982-08-25 | 1984-03-08 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5978560A (ja) * | 1982-10-26 | 1984-05-07 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法 |
| JPS59149045A (ja) * | 1983-02-16 | 1984-08-25 | Nec Corp | 半導体装置の製造方法 |
| US4935376A (en) * | 1989-10-12 | 1990-06-19 | At&T Bell Laboratories | Making silicide gate level runners |
| JPH0594963A (ja) * | 1990-08-16 | 1993-04-16 | Internatl Business Mach Corp <Ibm> | 集積回路の種々の厚さの耐火性金属シリサイド層を形成する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6136705B2 (cg-RX-API-DMAC10.html) | 1986-08-20 |
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