JPS55124270A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS55124270A
JPS55124270A JP3279579A JP3279579A JPS55124270A JP S55124270 A JPS55124270 A JP S55124270A JP 3279579 A JP3279579 A JP 3279579A JP 3279579 A JP3279579 A JP 3279579A JP S55124270 A JPS55124270 A JP S55124270A
Authority
JP
Japan
Prior art keywords
region
island
nitride film
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3279579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6214106B2 (enrdf_load_stackoverflow
Inventor
Kazutoshi Nagano
Tatsunori Nakajima
Kosuke Yasuno
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3279579A priority Critical patent/JPS55124270A/ja
Publication of JPS55124270A publication Critical patent/JPS55124270A/ja
Publication of JPS6214106B2 publication Critical patent/JPS6214106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Junction Field-Effect Transistors (AREA)
JP3279579A 1979-03-19 1979-03-19 Junction type field effect transistor Granted JPS55124270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3279579A JPS55124270A (en) 1979-03-19 1979-03-19 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3279579A JPS55124270A (en) 1979-03-19 1979-03-19 Junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS55124270A true JPS55124270A (en) 1980-09-25
JPS6214106B2 JPS6214106B2 (enrdf_load_stackoverflow) 1987-03-31

Family

ID=12368776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3279579A Granted JPS55124270A (en) 1979-03-19 1979-03-19 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS55124270A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6214106B2 (enrdf_load_stackoverflow) 1987-03-31

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