JPS6214106B2 - - Google Patents

Info

Publication number
JPS6214106B2
JPS6214106B2 JP54032795A JP3279579A JPS6214106B2 JP S6214106 B2 JPS6214106 B2 JP S6214106B2 JP 54032795 A JP54032795 A JP 54032795A JP 3279579 A JP3279579 A JP 3279579A JP S6214106 B2 JPS6214106 B2 JP S6214106B2
Authority
JP
Japan
Prior art keywords
region
field effect
effect transistor
porous
junction field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54032795A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55124270A (en
Inventor
Kazutoshi Nagano
Tatsunori Nakajima
Kosuke Yasuno
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3279579A priority Critical patent/JPS55124270A/ja
Publication of JPS55124270A publication Critical patent/JPS55124270A/ja
Publication of JPS6214106B2 publication Critical patent/JPS6214106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/83FETs having PN junction gate electrodes

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Junction Field-Effect Transistors (AREA)
JP3279579A 1979-03-19 1979-03-19 Junction type field effect transistor Granted JPS55124270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3279579A JPS55124270A (en) 1979-03-19 1979-03-19 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3279579A JPS55124270A (en) 1979-03-19 1979-03-19 Junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS55124270A JPS55124270A (en) 1980-09-25
JPS6214106B2 true JPS6214106B2 (enrdf_load_stackoverflow) 1987-03-31

Family

ID=12368776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3279579A Granted JPS55124270A (en) 1979-03-19 1979-03-19 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS55124270A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS55124270A (en) 1980-09-25

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