JPS55120171A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS55120171A
JPS55120171A JP2768479A JP2768479A JPS55120171A JP S55120171 A JPS55120171 A JP S55120171A JP 2768479 A JP2768479 A JP 2768479A JP 2768479 A JP2768479 A JP 2768479A JP S55120171 A JPS55120171 A JP S55120171A
Authority
JP
Japan
Prior art keywords
type
region
integrated circuit
gate electrode
drain regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2768479A
Other languages
English (en)
Other versions
JPS5731308B2 (ja
Inventor
Yukimasa Uchida
Norio Endo
Shozo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2768479A priority Critical patent/JPS55120171A/ja
Publication of JPS55120171A publication Critical patent/JPS55120171A/ja
Publication of JPS5731308B2 publication Critical patent/JPS5731308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2768479A 1979-03-12 1979-03-12 Semiconductor integrated circuit Granted JPS55120171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2768479A JPS55120171A (en) 1979-03-12 1979-03-12 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2768479A JPS55120171A (en) 1979-03-12 1979-03-12 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS55120171A true JPS55120171A (en) 1980-09-16
JPS5731308B2 JPS5731308B2 (ja) 1982-07-03

Family

ID=12227786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2768479A Granted JPS55120171A (en) 1979-03-12 1979-03-12 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55120171A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62131581A (ja) * 1985-12-03 1987-06-13 Matsushita Electronics Corp 半導体装置の製造方法
JPH05145045A (ja) * 1991-11-16 1993-06-11 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5343423A (en) * 1991-05-29 1994-08-30 Rohm Co., Ltd. FET memory device
US6208010B1 (en) 1985-09-25 2001-03-27 Hitachi, Ltd. Semiconductor memory device
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0293320U (ja) * 1989-01-11 1990-07-25

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502480A (ja) * 1973-05-08 1975-01-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502480A (ja) * 1973-05-08 1975-01-11

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6208010B1 (en) 1985-09-25 2001-03-27 Hitachi, Ltd. Semiconductor memory device
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device
US6864559B2 (en) 1985-09-25 2005-03-08 Renesas Technology Corp. Semiconductor memory device
JPS62131581A (ja) * 1985-12-03 1987-06-13 Matsushita Electronics Corp 半導体装置の製造方法
US5343423A (en) * 1991-05-29 1994-08-30 Rohm Co., Ltd. FET memory device
JPH05145045A (ja) * 1991-11-16 1993-06-11 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
JPS5731308B2 (ja) 1982-07-03

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