JPS55117241A - Method of forming insulating film on third to fifth group compound semiconductor - Google Patents
Method of forming insulating film on third to fifth group compound semiconductorInfo
- Publication number
- JPS55117241A JPS55117241A JP2452679A JP2452679A JPS55117241A JP S55117241 A JPS55117241 A JP S55117241A JP 2452679 A JP2452679 A JP 2452679A JP 2452679 A JP2452679 A JP 2452679A JP S55117241 A JPS55117241 A JP S55117241A
- Authority
- JP
- Japan
- Prior art keywords
- specimen
- compound semiconductor
- group compound
- insulating film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 150000001875 compounds Chemical class 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2452679A JPS5845174B2 (ja) | 1979-03-05 | 1979-03-05 | 3↓−5族化合物半導体上の絶縁膜形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2452679A JPS5845174B2 (ja) | 1979-03-05 | 1979-03-05 | 3↓−5族化合物半導体上の絶縁膜形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55117241A true JPS55117241A (en) | 1980-09-09 |
JPS5845174B2 JPS5845174B2 (ja) | 1983-10-07 |
Family
ID=12140590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2452679A Expired JPS5845174B2 (ja) | 1979-03-05 | 1979-03-05 | 3↓−5族化合物半導体上の絶縁膜形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5845174B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162338A (en) * | 1981-03-13 | 1982-10-06 | Western Electric Co | Method of etching semiconductor |
JPS59220927A (ja) * | 1983-05-31 | 1984-12-12 | Fujitsu Ltd | 半導体装置の製造方法 |
US7122477B2 (en) | 2001-09-12 | 2006-10-17 | Tokyo Electron Limited | Method of plasma treatment |
-
1979
- 1979-03-05 JP JP2452679A patent/JPS5845174B2/ja not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162338A (en) * | 1981-03-13 | 1982-10-06 | Western Electric Co | Method of etching semiconductor |
JPS59220927A (ja) * | 1983-05-31 | 1984-12-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0458177B2 (ja) * | 1983-05-31 | 1992-09-16 | Fujitsu Ltd | |
US7122477B2 (en) | 2001-09-12 | 2006-10-17 | Tokyo Electron Limited | Method of plasma treatment |
Also Published As
Publication number | Publication date |
---|---|
JPS5845174B2 (ja) | 1983-10-07 |
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