JPS55115345A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55115345A JPS55115345A JP2293079A JP2293079A JPS55115345A JP S55115345 A JPS55115345 A JP S55115345A JP 2293079 A JP2293079 A JP 2293079A JP 2293079 A JP2293079 A JP 2293079A JP S55115345 A JPS55115345 A JP S55115345A
- Authority
- JP
- Japan
- Prior art keywords
- nitride film
- wafer
- groove
- oxide film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain an oxide film for isolating the elements, which has high precision with no swell on the surface of wafer and no encroachment in the lateral direction, by laminating a nitride film on the wafer.
CONSTITUTION: The mask 2 of nitride film is provided on the Si wafer 1 and oxidized at high tempeature, the oxide film is etched with fluoric acid to form the groove 5. The nitride film 6 is generated by the vapor growth method to cover the entire surface. Next the nitride film 6 is removed from the bottom of the groove 5 by the plasma of Freon gas. At this time, the nitride film 7 is remained under the eaves of the nitride film 2 in the groove 5 on account of the rectilinear propagation nature of gas plasma. The oxide film 8 is generated up to the surface of wafer by wet oxidation, and the nitride film 2 is removed from the surface last. In this way, a flat surface can be obtained, no break of the wiring will take place, the dimension of isolating layer is exact, no deterioration of voltage withstanding capability will be developed, the device can be miniaturized.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2293079A JPS55115345A (en) | 1979-02-28 | 1979-02-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2293079A JPS55115345A (en) | 1979-02-28 | 1979-02-28 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55115345A true JPS55115345A (en) | 1980-09-05 |
Family
ID=12096340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2293079A Pending JPS55115345A (en) | 1979-02-28 | 1979-02-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55115345A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180152A (en) * | 1981-04-30 | 1982-11-06 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS58135655A (en) * | 1982-02-08 | 1983-08-12 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device with oxide film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53120289A (en) * | 1977-03-30 | 1978-10-20 | Toshiba Corp | Manufacture of semiconductor device |
-
1979
- 1979-02-28 JP JP2293079A patent/JPS55115345A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53120289A (en) * | 1977-03-30 | 1978-10-20 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180152A (en) * | 1981-04-30 | 1982-11-06 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS58135655A (en) * | 1982-02-08 | 1983-08-12 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device with oxide film |
| JPH0413854B2 (en) * | 1982-02-08 | 1992-03-11 | Nippon Telegraph & Telephone |
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