JPS551142A - Semiconductor with protector - Google Patents

Semiconductor with protector

Info

Publication number
JPS551142A
JPS551142A JP7439378A JP7439378A JPS551142A JP S551142 A JPS551142 A JP S551142A JP 7439378 A JP7439378 A JP 7439378A JP 7439378 A JP7439378 A JP 7439378A JP S551142 A JPS551142 A JP S551142A
Authority
JP
Japan
Prior art keywords
gate
range
type
substrate
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7439378A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6115593B2 (enrdf_load_stackoverflow
Inventor
Hatsuhide Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7439378A priority Critical patent/JPS551142A/ja
Publication of JPS551142A publication Critical patent/JPS551142A/ja
Publication of JPS6115593B2 publication Critical patent/JPS6115593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
JP7439378A 1978-06-19 1978-06-19 Semiconductor with protector Granted JPS551142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7439378A JPS551142A (en) 1978-06-19 1978-06-19 Semiconductor with protector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7439378A JPS551142A (en) 1978-06-19 1978-06-19 Semiconductor with protector

Publications (2)

Publication Number Publication Date
JPS551142A true JPS551142A (en) 1980-01-07
JPS6115593B2 JPS6115593B2 (enrdf_load_stackoverflow) 1986-04-24

Family

ID=13545886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7439378A Granted JPS551142A (en) 1978-06-19 1978-06-19 Semiconductor with protector

Country Status (1)

Country Link
JP (1) JPS551142A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489245A (en) * 1980-09-10 1984-12-18 Kabushiki Kaisha Toshiba D.C. Voltage bias circuit in an integrated circuit
JPS6211258A (ja) * 1985-07-08 1987-01-20 Nec Corp ＧａＡｓ半導体集積回路
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
JP2012199285A (ja) * 2011-03-18 2012-10-18 Fujitsu Semiconductor Ltd 半導体素子、半導体素子の製造方法、およびトランジスタ回路

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489245A (en) * 1980-09-10 1984-12-18 Kabushiki Kaisha Toshiba D.C. Voltage bias circuit in an integrated circuit
JPS6211258A (ja) * 1985-07-08 1987-01-20 Nec Corp ＧａＡｓ半導体集積回路
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
USRE38222E1 (en) * 1996-06-28 2003-08-19 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
JP2012199285A (ja) * 2011-03-18 2012-10-18 Fujitsu Semiconductor Ltd 半導体素子、半導体素子の製造方法、およびトランジスタ回路

Also Published As

Publication number Publication date
JPS6115593B2 (enrdf_load_stackoverflow) 1986-04-24

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