JPS55113358A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55113358A
JPS55113358A JP1983679A JP1983679A JPS55113358A JP S55113358 A JPS55113358 A JP S55113358A JP 1983679 A JP1983679 A JP 1983679A JP 1983679 A JP1983679 A JP 1983679A JP S55113358 A JPS55113358 A JP S55113358A
Authority
JP
Japan
Prior art keywords
region
type
diffusion
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1983679A
Other languages
English (en)
Other versions
JPS6248901B2 (ja
Inventor
Takashi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1983679A priority Critical patent/JPS55113358A/ja
Priority to DE19792951421 priority patent/DE2951421A1/de
Priority to IT20126/80A priority patent/IT1141374B/it
Publication of JPS55113358A publication Critical patent/JPS55113358A/ja
Publication of JPS6248901B2 publication Critical patent/JPS6248901B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP1983679A 1979-02-23 1979-02-23 Semiconductor device Granted JPS55113358A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1983679A JPS55113358A (en) 1979-02-23 1979-02-23 Semiconductor device
DE19792951421 DE2951421A1 (de) 1979-02-23 1979-12-20 Integrierte halbleiterschaltung
IT20126/80A IT1141374B (it) 1979-02-23 1980-02-22 Circuito integrato a semiconduttori

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983679A JPS55113358A (en) 1979-02-23 1979-02-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55113358A true JPS55113358A (en) 1980-09-01
JPS6248901B2 JPS6248901B2 (ja) 1987-10-16

Family

ID=12010351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983679A Granted JPS55113358A (en) 1979-02-23 1979-02-23 Semiconductor device

Country Status (3)

Country Link
JP (1) JPS55113358A (ja)
DE (1) DE2951421A1 (ja)
IT (1) IT1141374B (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139957A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Protective diode of semiconductor integrated circuit device
JPS58186959A (ja) * 1982-04-26 1983-11-01 Nec Corp 半導体装置
JPS59702U (ja) * 1982-06-22 1984-01-06 三洋電機株式会社 錠剤包装機の摘出錠剤確認装置
JPS59200454A (ja) * 1983-04-27 1984-11-13 Nec Corp 静電破壊保護素子
JPS63190374A (ja) * 1987-02-02 1988-08-05 Matsushita Electronics Corp 半導体保護装置
US5326994A (en) * 1991-10-22 1994-07-05 Deutsche Itt Industries Gmbh Protective circuit for protecting contacts of monolithic integrated circuits by preventing parasitic latch up with other integrated circuit elements
US5440151A (en) * 1993-04-09 1995-08-08 Matra Mhs Electrostatic discharge protection device for MOS integrated circuits

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5696851A (en) * 1979-12-27 1981-08-05 Fujitsu Ltd Static breakdown preventive element
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
GB2088634B (en) * 1980-12-03 1984-08-15 Rca Corp Protection circuit for integrated circuit devices
GB2092377B (en) * 1981-01-30 1985-07-31 Rca Corp Protection circuit for integrated circuit devices
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages
DE3835569A1 (de) * 1988-10-19 1990-05-03 Telefunken Electronic Gmbh Schutzanordnung

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139957A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Protective diode of semiconductor integrated circuit device
JPS58186959A (ja) * 1982-04-26 1983-11-01 Nec Corp 半導体装置
JPS59702U (ja) * 1982-06-22 1984-01-06 三洋電機株式会社 錠剤包装機の摘出錠剤確認装置
JPS59200454A (ja) * 1983-04-27 1984-11-13 Nec Corp 静電破壊保護素子
JPH0468785B2 (ja) * 1983-04-27 1992-11-04 Nippon Electric Co
JPS63190374A (ja) * 1987-02-02 1988-08-05 Matsushita Electronics Corp 半導体保護装置
US5326994A (en) * 1991-10-22 1994-07-05 Deutsche Itt Industries Gmbh Protective circuit for protecting contacts of monolithic integrated circuits by preventing parasitic latch up with other integrated circuit elements
US5440151A (en) * 1993-04-09 1995-08-08 Matra Mhs Electrostatic discharge protection device for MOS integrated circuits

Also Published As

Publication number Publication date
DE2951421A1 (de) 1980-09-04
IT8020126A0 (it) 1980-02-22
IT1141374B (it) 1986-10-01
JPS6248901B2 (ja) 1987-10-16

Similar Documents

Publication Publication Date Title
JPS55113358A (en) Semiconductor device
JPS57141962A (en) Semiconductor integrated circuit device
JPS567463A (en) Semiconductor device and its manufacture
KR950030309A (ko) 반도체장치의 보호회로
JPS54157092A (en) Semiconductor integrated circuit device
JPS56162864A (en) Semiconductor device
JPS54140875A (en) Semiconductor device
JPS55115340A (en) Semiconductor device
JPS5650527A (en) Semiconductor integrated circuit device
JP2537161B2 (ja) Mos型半導体装置
JPS5718353A (en) Semiconductor device
JPS5580350A (en) Semiconductor integrated circuit
JPS5588372A (en) Lateral type transistor
JPS54141578A (en) Semiconductor device
JPS6484733A (en) Semiconductor device
JPS54154281A (en) Bipolar semiconductor device and its manufacture
JPS5591173A (en) Semiconductor integrated circuit device
JPS55140263A (en) Surge preventive circuit for bipolar integrated circuit
JPS5563874A (en) Semiconductor device
JPS5339073A (en) Semiconductor device
JPH03206664A (ja) 垂直型半導体集積電力構造に挿入されるn↑+型拡散領域の破壊を保護するためのデバイス
JPS5649560A (en) Semiconductor ic device
JPS55108771A (en) Semiconductor device
JPS57164571A (en) Semiconductro integrated circuit device
JPS56112752A (en) Semiconductor device