JPS55110080A - Manufacture of junction type field-effect transistor - Google Patents
Manufacture of junction type field-effect transistorInfo
- Publication number
- JPS55110080A JPS55110080A JP1739379A JP1739379A JPS55110080A JP S55110080 A JPS55110080 A JP S55110080A JP 1739379 A JP1739379 A JP 1739379A JP 1739379 A JP1739379 A JP 1739379A JP S55110080 A JPS55110080 A JP S55110080A
- Authority
- JP
- Japan
- Prior art keywords
- film
- poly
- sio2
- injecting
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Abstract
PURPOSE:To obatin a very fine, high-precision JFET by the method wherein, after opening a high concentration impurity added poly-Si film on SiO2 film, it is oxidized and is converted into SiO2 film. CONSTITUTION:An n epitaxial layer 2, SiO2 film 3 and poly-Si film 4 are laminated on p-type Si substrate 1. After p diffusion and photoetching, this is processed at a high temperature in O2 and poly-Si film 4 is converted into SiO2 film containing thin P2O5 film. SiO2 films 5-7 produced at this time on exposed substrate surfaces 5-7 are etched and removed. Resist mask 12 is provided, and n<+>-layers 13, 14 are formed by injecting As ions. Resist mask 13 is provided, and p<+>-layer 15 is formed by injecting B ions. After processing in an inert atmosphere at a temperature of about 900 deg.C for a specified time, electrodes 17-19 are formed. Since a sufficiently thick impurity diffusion mask is formed by oxidizing the poly-Si film on the oxide film in this way, no pinholes are produced and fine patterns can be obtained. By ion injection and proper annealing, the depth of the active layer can be controlled with high precision, and a high-performance JFET can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1739379A JPS55110080A (en) | 1979-02-16 | 1979-02-16 | Manufacture of junction type field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1739379A JPS55110080A (en) | 1979-02-16 | 1979-02-16 | Manufacture of junction type field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55110080A true JPS55110080A (en) | 1980-08-25 |
Family
ID=11942748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1739379A Pending JPS55110080A (en) | 1979-02-16 | 1979-02-16 | Manufacture of junction type field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55110080A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114496733A (en) * | 2022-04-15 | 2022-05-13 | 济南晶正电子科技有限公司 | High-resistivity composite substrate, preparation method and electronic component |
-
1979
- 1979-02-16 JP JP1739379A patent/JPS55110080A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114496733A (en) * | 2022-04-15 | 2022-05-13 | 济南晶正电子科技有限公司 | High-resistivity composite substrate, preparation method and electronic component |
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