JPS55110069A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55110069A
JPS55110069A JP1615879A JP1615879A JPS55110069A JP S55110069 A JPS55110069 A JP S55110069A JP 1615879 A JP1615879 A JP 1615879A JP 1615879 A JP1615879 A JP 1615879A JP S55110069 A JPS55110069 A JP S55110069A
Authority
JP
Japan
Prior art keywords
layer
resistance
control
type
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1615879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS611900B2 (enExample
Inventor
Kazuo Yudasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1615879A priority Critical patent/JPS55110069A/ja
Publication of JPS55110069A publication Critical patent/JPS55110069A/ja
Publication of JPS611900B2 publication Critical patent/JPS611900B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Static Random-Access Memory (AREA)
JP1615879A 1979-02-16 1979-02-16 Semiconductor memory device Granted JPS55110069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1615879A JPS55110069A (en) 1979-02-16 1979-02-16 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1615879A JPS55110069A (en) 1979-02-16 1979-02-16 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55110069A true JPS55110069A (en) 1980-08-25
JPS611900B2 JPS611900B2 (enExample) 1986-01-21

Family

ID=11908689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1615879A Granted JPS55110069A (en) 1979-02-16 1979-02-16 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55110069A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674955A (en) * 1979-11-22 1981-06-20 Toshiba Corp Semiconductor device
JPS59104171A (ja) * 1982-12-06 1984-06-15 Seiko Epson Corp 半導体装置
JPH022661A (ja) * 1988-06-17 1990-01-08 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路装置
JPH0214566A (ja) * 1989-04-10 1990-01-18 Seiko Epson Corp フリップフロップ
JPH0214565A (ja) * 1989-04-10 1990-01-18 Seiko Epson Corp ランダム・アクセス・メモリ
JPH0221655A (ja) * 1989-04-10 1990-01-24 Seiko Epson Corp フリップフロップ
JPH04211166A (ja) * 1991-01-28 1992-08-03 Seiko Epson Corp 薄膜トランジスタ
JPH0669458A (ja) * 1992-02-24 1994-03-11 Seiko Epson Corp メモリセル
JPH0677436A (ja) * 1992-02-24 1994-03-18 Seiko Epson Corp ランダム・アクセス・メモリ
US5298764A (en) * 1991-03-08 1994-03-29 Hitachi, Ltd. Semiconductor memory device having a field effect transistor with a channel formed from a polycrystalline silicon film
JPH06227424A (ja) * 1991-06-03 1994-08-16 Norin Suisansyo Shikoku Nogyo Shikenjo トラクタ
US5536951A (en) * 1993-06-24 1996-07-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having thin film transistor with diffusion preventing layer
US5770892A (en) * 1989-01-18 1998-06-23 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
EP0877425A3 (en) * 1990-05-31 1999-04-21 STMicroelectronics, Inc. Field effect device with polycrystalline silicon channel

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674955A (en) * 1979-11-22 1981-06-20 Toshiba Corp Semiconductor device
JPS59104171A (ja) * 1982-12-06 1984-06-15 Seiko Epson Corp 半導体装置
JPH022661A (ja) * 1988-06-17 1990-01-08 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路装置
US5770892A (en) * 1989-01-18 1998-06-23 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
JPH0214566A (ja) * 1989-04-10 1990-01-18 Seiko Epson Corp フリップフロップ
JPH0214565A (ja) * 1989-04-10 1990-01-18 Seiko Epson Corp ランダム・アクセス・メモリ
JPH0221655A (ja) * 1989-04-10 1990-01-24 Seiko Epson Corp フリップフロップ
EP0952614A1 (en) * 1990-05-31 1999-10-27 STMicroelectronics, Inc. Field effect device with polycrystaline silicon channel
EP0877425A3 (en) * 1990-05-31 1999-04-21 STMicroelectronics, Inc. Field effect device with polycrystalline silicon channel
JPH04211166A (ja) * 1991-01-28 1992-08-03 Seiko Epson Corp 薄膜トランジスタ
US5298764A (en) * 1991-03-08 1994-03-29 Hitachi, Ltd. Semiconductor memory device having a field effect transistor with a channel formed from a polycrystalline silicon film
JPH06227424A (ja) * 1991-06-03 1994-08-16 Norin Suisansyo Shikoku Nogyo Shikenjo トラクタ
JPH0677436A (ja) * 1992-02-24 1994-03-18 Seiko Epson Corp ランダム・アクセス・メモリ
JPH0669458A (ja) * 1992-02-24 1994-03-11 Seiko Epson Corp メモリセル
US5536951A (en) * 1993-06-24 1996-07-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having thin film transistor with diffusion preventing layer

Also Published As

Publication number Publication date
JPS611900B2 (enExample) 1986-01-21

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