JPS611900B2 - - Google Patents
Info
- Publication number
- JPS611900B2 JPS611900B2 JP54016158A JP1615879A JPS611900B2 JP S611900 B2 JPS611900 B2 JP S611900B2 JP 54016158 A JP54016158 A JP 54016158A JP 1615879 A JP1615879 A JP 1615879A JP S611900 B2 JPS611900 B2 JP S611900B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Local Oxidation Of Silicon (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1615879A JPS55110069A (en) | 1979-02-16 | 1979-02-16 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1615879A JPS55110069A (en) | 1979-02-16 | 1979-02-16 | Semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55110069A JPS55110069A (en) | 1980-08-25 |
| JPS611900B2 true JPS611900B2 (enExample) | 1986-01-21 |
Family
ID=11908689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1615879A Granted JPS55110069A (en) | 1979-02-16 | 1979-02-16 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55110069A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5674955A (en) * | 1979-11-22 | 1981-06-20 | Toshiba Corp | Semiconductor device |
| JPS59104171A (ja) * | 1982-12-06 | 1984-06-15 | Seiko Epson Corp | 半導体装置 |
| JP2691993B2 (ja) * | 1988-06-17 | 1997-12-17 | 日本電信電話株式会社 | 半導体集積回路装置 |
| US5770892A (en) * | 1989-01-18 | 1998-06-23 | Sgs-Thomson Microelectronics, Inc. | Field effect device with polycrystalline silicon channel |
| US5135888A (en) * | 1989-01-18 | 1992-08-04 | Sgs-Thomson Microelectronics, Inc. | Field effect device with polycrystalline silicon channel |
| JPH0214565A (ja) * | 1989-04-10 | 1990-01-18 | Seiko Epson Corp | ランダム・アクセス・メモリ |
| JPH0214566A (ja) * | 1989-04-10 | 1990-01-18 | Seiko Epson Corp | フリップフロップ |
| JPH0221655A (ja) * | 1989-04-10 | 1990-01-24 | Seiko Epson Corp | フリップフロップ |
| JPH04211166A (ja) * | 1991-01-28 | 1992-08-03 | Seiko Epson Corp | 薄膜トランジスタ |
| JP3231345B2 (ja) * | 1991-03-08 | 2001-11-19 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法 |
| JPH06227424A (ja) * | 1991-06-03 | 1994-08-16 | Norin Suisansyo Shikoku Nogyo Shikenjo | トラクタ |
| JPH0677436A (ja) * | 1992-02-24 | 1994-03-18 | Seiko Epson Corp | ランダム・アクセス・メモリ |
| JPH0732203B2 (ja) * | 1992-02-24 | 1995-04-10 | セイコーエプソン株式会社 | メモリセル |
| JPH0799322A (ja) * | 1993-06-24 | 1995-04-11 | Mitsubishi Electric Corp | 薄膜トランジスタを有する半導体装置およびその製造方法 |
-
1979
- 1979-02-16 JP JP1615879A patent/JPS55110069A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55110069A (en) | 1980-08-25 |