JPS55108768A - Electrostatic induction thyristor - Google Patents
Electrostatic induction thyristorInfo
- Publication number
- JPS55108768A JPS55108768A JP1575779A JP1575779A JPS55108768A JP S55108768 A JPS55108768 A JP S55108768A JP 1575779 A JP1575779 A JP 1575779A JP 1575779 A JP1575779 A JP 1575779A JP S55108768 A JPS55108768 A JP S55108768A
- Authority
- JP
- Japan
- Prior art keywords
- region
- cathode
- anode
- voltage
- injected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 title 1
- 238000005036 potential barrier Methods 0.000 abstract 3
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1575779A JPS55108768A (en) | 1979-02-13 | 1979-02-13 | Electrostatic induction thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1575779A JPS55108768A (en) | 1979-02-13 | 1979-02-13 | Electrostatic induction thyristor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28560586A Division JPS62241374A (ja) | 1986-11-28 | 1986-11-28 | 静電誘導サイリスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55108768A true JPS55108768A (en) | 1980-08-21 |
JPS6221276B2 JPS6221276B2 (ja) | 1987-05-12 |
Family
ID=11897643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1575779A Granted JPS55108768A (en) | 1979-02-13 | 1979-02-13 | Electrostatic induction thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55108768A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0043009A2 (de) * | 1980-06-26 | 1982-01-06 | Siemens Aktiengesellschaft | Steuerbarer Halbleiterschalter |
JPS57172765A (en) * | 1981-04-17 | 1982-10-23 | Semiconductor Res Found | Electrostatic induction thyristor |
US5132238A (en) * | 1989-12-28 | 1992-07-21 | Nissan Motor Co., Ltd. | Method of manufacturing semiconductor device utilizing an accumulation layer |
JP2008311573A (ja) * | 2007-06-18 | 2008-12-25 | Rohm Co Ltd | 半導体装置 |
JP2008311574A (ja) * | 2007-06-18 | 2008-12-25 | Rohm Co Ltd | 半導体装置 |
US8766317B2 (en) | 2007-06-18 | 2014-07-01 | Rohm Co., Ltd. | Semiconductor device |
-
1979
- 1979-02-13 JP JP1575779A patent/JPS55108768A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0043009A2 (de) * | 1980-06-26 | 1982-01-06 | Siemens Aktiengesellschaft | Steuerbarer Halbleiterschalter |
JPS57172765A (en) * | 1981-04-17 | 1982-10-23 | Semiconductor Res Found | Electrostatic induction thyristor |
JPH0241182B2 (ja) * | 1981-04-17 | 1990-09-14 | Handotai Kenkyu Shinkokai | |
US5132238A (en) * | 1989-12-28 | 1992-07-21 | Nissan Motor Co., Ltd. | Method of manufacturing semiconductor device utilizing an accumulation layer |
USRE35405E (en) * | 1989-12-28 | 1996-12-17 | Nissan Motor Co., Ltd. | Method of manufacturing semiconductor device utilizing an accumulation layer |
JP2008311573A (ja) * | 2007-06-18 | 2008-12-25 | Rohm Co Ltd | 半導体装置 |
JP2008311574A (ja) * | 2007-06-18 | 2008-12-25 | Rohm Co Ltd | 半導体装置 |
US8766317B2 (en) | 2007-06-18 | 2014-07-01 | Rohm Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6221276B2 (ja) | 1987-05-12 |
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