JPS56148865A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS56148865A
JPS56148865A JP5245980A JP5245980A JPS56148865A JP S56148865 A JPS56148865 A JP S56148865A JP 5245980 A JP5245980 A JP 5245980A JP 5245980 A JP5245980 A JP 5245980A JP S56148865 A JPS56148865 A JP S56148865A
Authority
JP
Japan
Prior art keywords
current
gate
channel
electrode
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5245980A
Other languages
Japanese (ja)
Other versions
JPS6154261B2 (en
Inventor
Junichi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5245980A priority Critical patent/JPS56148865A/en
Publication of JPS56148865A publication Critical patent/JPS56148865A/en
Publication of JPS6154261B2 publication Critical patent/JPS6154261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Abstract

PURPOSE:To enable to vary only a gate trigger current in a wide range by so forming that the gate trigger current becomes the sum of the forward bias current of the junction and the channel current of an MOS part. CONSTITUTION:When positive voltage is applied to a gate electrode 9 and the second main electrode 9, the junction 11 between the P type base layer 3 and the N type emitter layer 4 is forwardly biased. In the MOS part having the gate electrode 9, a metallic electrode 10, an oxide film 6 and a P type base layer 3, a channel is formed between the N type emitter layer 4 and a gate electrode lower region 5. An electric current between the gate electrode 9 and the second main electrode 8 becomes the sum of the forward bias current of the junction 11 and the channel current of the MOS part, and the gate trigger current increases in the amount corresponding to the channel current of the MOS part.
JP5245980A 1980-04-21 1980-04-21 Thyristor Granted JPS56148865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5245980A JPS56148865A (en) 1980-04-21 1980-04-21 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5245980A JPS56148865A (en) 1980-04-21 1980-04-21 Thyristor

Publications (2)

Publication Number Publication Date
JPS56148865A true JPS56148865A (en) 1981-11-18
JPS6154261B2 JPS6154261B2 (en) 1986-11-21

Family

ID=12915296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5245980A Granted JPS56148865A (en) 1980-04-21 1980-04-21 Thyristor

Country Status (1)

Country Link
JP (1) JPS56148865A (en)

Also Published As

Publication number Publication date
JPS6154261B2 (en) 1986-11-21

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