JPS55107781A - Etching method for metal film - Google Patents
Etching method for metal filmInfo
- Publication number
- JPS55107781A JPS55107781A JP1560179A JP1560179A JPS55107781A JP S55107781 A JPS55107781 A JP S55107781A JP 1560179 A JP1560179 A JP 1560179A JP 1560179 A JP1560179 A JP 1560179A JP S55107781 A JPS55107781 A JP S55107781A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- etching
- electrode
- layer
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1560179A JPS55107781A (en) | 1979-02-13 | 1979-02-13 | Etching method for metal film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1560179A JPS55107781A (en) | 1979-02-13 | 1979-02-13 | Etching method for metal film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55107781A true JPS55107781A (en) | 1980-08-19 |
JPS6122031B2 JPS6122031B2 (enrdf_load_stackoverflow) | 1986-05-29 |
Family
ID=11893233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1560179A Granted JPS55107781A (en) | 1979-02-13 | 1979-02-13 | Etching method for metal film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55107781A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998021745A1 (fr) * | 1996-11-14 | 1998-05-22 | Tokyo Electron Limited | Procede de fabrication d'un dispositif semi-conducteur |
-
1979
- 1979-02-13 JP JP1560179A patent/JPS55107781A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998021745A1 (fr) * | 1996-11-14 | 1998-05-22 | Tokyo Electron Limited | Procede de fabrication d'un dispositif semi-conducteur |
US6727182B2 (en) | 1996-11-14 | 2004-04-27 | Tokyo Electron Limited | Process for the production of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6122031B2 (enrdf_load_stackoverflow) | 1986-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5620165A (en) | Formation of pattern | |
JPS5656636A (en) | Processing method of fine pattern | |
JPS55107781A (en) | Etching method for metal film | |
JPS52119172A (en) | Forming method of fine pattern | |
JPS57145340A (en) | Manufacture of semiconductor device | |
JPS5469090A (en) | Manufacture of semiconductor device | |
JPS5461478A (en) | Chromium plate | |
JPS6459936A (en) | Manufacture of integrated circuit | |
JPS56148845A (en) | Manufacture of semiconductor device | |
JPS57198632A (en) | Fine pattern formation | |
JPS563679A (en) | Formation of metallic pattern | |
JPS56138941A (en) | Forming method of wiring layer | |
JPS56148846A (en) | Manufacture of circuit pattern | |
JPS57201026A (en) | Manufacture of semiconductor device | |
JPS54107277A (en) | Production of semiconductor device | |
JPS5493970A (en) | Patttern forming method of multi-layer metallic thin film | |
JPS53112054A (en) | Gas discharging panel | |
JPS5485676A (en) | Glass mask | |
JPS54152984A (en) | Manufacture of semiconductor device | |
JPS5635774A (en) | Dry etching method | |
JPS54134990A (en) | Formation method of conductive region of semiconductor device | |
JPS56111246A (en) | Preparation of semiconductor device | |
JPS5498179A (en) | Preparation of minute circuits and elements | |
JPS54162460A (en) | Electrode forming method | |
JPS5623277A (en) | Dry etching method |