JPS5476076A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5476076A JPS5476076A JP14359177A JP14359177A JPS5476076A JP S5476076 A JPS5476076 A JP S5476076A JP 14359177 A JP14359177 A JP 14359177A JP 14359177 A JP14359177 A JP 14359177A JP S5476076 A JPS5476076 A JP S5476076A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- mask
- oxide film
- film
- produced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To perform integration with high density, by producing the electrode window with self-alignment by utilizing thermal oxide film on the poly Si gate.
CONSTITUTION: The Si3N413 is laminated on the gate oxide film 12G of the Si substrate and the conductive polyamide Si 15 is laminated via the polyamide 14 mask. The mask and the lithophre poly Si gate 15G are produced. The thermal oxide film 16 is produced selectively with the mask 13 and the film 16 other than the gate section is selectively removed. Next, after removing the mask 13 with heated phosphoric acid, window is opened without mask by utilizing the difference of thickness of the thick film 16 and thin film 12. The phosphorous diffusion layers 18S and 18D are produced by covering with PSG 17 and with heat treatment. Further, the end in contact with the gate is given the electrode window with photo etching by the self-alignment with the oxide film 16. Finally, the Al electrodes 19S, 19D are formed. Thus, the electrode window can be formed very closely with the gate or partly duplicatedly on the gate, and the element occupied area can be made smaller.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14359177A JPS5476076A (en) | 1977-11-30 | 1977-11-30 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14359177A JPS5476076A (en) | 1977-11-30 | 1977-11-30 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5476076A true JPS5476076A (en) | 1979-06-18 |
Family
ID=15342279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14359177A Pending JPS5476076A (en) | 1977-11-30 | 1977-11-30 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5476076A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0334539A (en) * | 1989-06-26 | 1991-02-14 | Philips Gloeilampenfab:Nv | Manufacture of semiconductor device |
-
1977
- 1977-11-30 JP JP14359177A patent/JPS5476076A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0334539A (en) * | 1989-06-26 | 1991-02-14 | Philips Gloeilampenfab:Nv | Manufacture of semiconductor device |
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