JPS5476076A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5476076A
JPS5476076A JP14359177A JP14359177A JPS5476076A JP S5476076 A JPS5476076 A JP S5476076A JP 14359177 A JP14359177 A JP 14359177A JP 14359177 A JP14359177 A JP 14359177A JP S5476076 A JPS5476076 A JP S5476076A
Authority
JP
Japan
Prior art keywords
gate
mask
oxide film
film
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14359177A
Other languages
Japanese (ja)
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14359177A priority Critical patent/JPS5476076A/en
Publication of JPS5476076A publication Critical patent/JPS5476076A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To perform integration with high density, by producing the electrode window with self-alignment by utilizing thermal oxide film on the poly Si gate.
CONSTITUTION: The Si3N413 is laminated on the gate oxide film 12G of the Si substrate and the conductive polyamide Si 15 is laminated via the polyamide 14 mask. The mask and the lithophre poly Si gate 15G are produced. The thermal oxide film 16 is produced selectively with the mask 13 and the film 16 other than the gate section is selectively removed. Next, after removing the mask 13 with heated phosphoric acid, window is opened without mask by utilizing the difference of thickness of the thick film 16 and thin film 12. The phosphorous diffusion layers 18S and 18D are produced by covering with PSG 17 and with heat treatment. Further, the end in contact with the gate is given the electrode window with photo etching by the self-alignment with the oxide film 16. Finally, the Al electrodes 19S, 19D are formed. Thus, the electrode window can be formed very closely with the gate or partly duplicatedly on the gate, and the element occupied area can be made smaller.
COPYRIGHT: (C)1979,JPO&Japio
JP14359177A 1977-11-30 1977-11-30 Manufacture for semiconductor device Pending JPS5476076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14359177A JPS5476076A (en) 1977-11-30 1977-11-30 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14359177A JPS5476076A (en) 1977-11-30 1977-11-30 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5476076A true JPS5476076A (en) 1979-06-18

Family

ID=15342279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14359177A Pending JPS5476076A (en) 1977-11-30 1977-11-30 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5476076A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334539A (en) * 1989-06-26 1991-02-14 Philips Gloeilampenfab:Nv Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334539A (en) * 1989-06-26 1991-02-14 Philips Gloeilampenfab:Nv Manufacture of semiconductor device

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