JPS5471564A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5471564A JPS5471564A JP13860477A JP13860477A JPS5471564A JP S5471564 A JPS5471564 A JP S5471564A JP 13860477 A JP13860477 A JP 13860477A JP 13860477 A JP13860477 A JP 13860477A JP S5471564 A JPS5471564 A JP S5471564A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wirings
- alloy layer
- deposited
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13860477A JPS6047739B2 (ja) | 1977-11-17 | 1977-11-17 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13860477A JPS6047739B2 (ja) | 1977-11-17 | 1977-11-17 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5471564A true JPS5471564A (en) | 1979-06-08 |
JPS6047739B2 JPS6047739B2 (ja) | 1985-10-23 |
Family
ID=15225965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13860477A Expired JPS6047739B2 (ja) | 1977-11-17 | 1977-11-17 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6047739B2 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60149166A (ja) * | 1983-08-12 | 1985-08-06 | テクトロニツクス・インコーポレイテツド | 集積回路の製造方法 |
JPS61283174A (ja) * | 1985-06-07 | 1986-12-13 | Kanegafuchi Chem Ind Co Ltd | 耐熱性薄膜光電変換素子およびその製法 |
JPS6245168A (ja) * | 1985-08-23 | 1987-02-27 | Hitachi Vlsi Eng Corp | 半導体記憶装置 |
EP0430403A2 (en) * | 1989-11-30 | 1991-06-05 | STMicroelectronics, Inc. | Method for fabricating interlevel contacts |
US5374592A (en) * | 1992-09-22 | 1994-12-20 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum metal contact |
US5472912A (en) * | 1989-11-30 | 1995-12-05 | Sgs-Thomson Microelectronics, Inc. | Method of making an integrated circuit structure by using a non-conductive plug |
US5658828A (en) * | 1989-11-30 | 1997-08-19 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum contact through an insulating layer |
US5930673A (en) * | 1990-11-05 | 1999-07-27 | Stmicroelectronics, Inc. | Method for forming a metal contact |
US6242811B1 (en) | 1989-11-30 | 2001-06-05 | Stmicroelectronics, Inc. | Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature |
US6271137B1 (en) | 1989-11-30 | 2001-08-07 | Stmicroelectronics, Inc. | Method of producing an aluminum stacked contact/via for multilayer |
US6287963B1 (en) | 1990-11-05 | 2001-09-11 | Stmicroelectronics, Inc. | Method for forming a metal contact |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0248577U (ja) * | 1988-09-29 | 1990-04-04 |
-
1977
- 1977-11-17 JP JP13860477A patent/JPS6047739B2/ja not_active Expired
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60149166A (ja) * | 1983-08-12 | 1985-08-06 | テクトロニツクス・インコーポレイテツド | 集積回路の製造方法 |
JPS61283174A (ja) * | 1985-06-07 | 1986-12-13 | Kanegafuchi Chem Ind Co Ltd | 耐熱性薄膜光電変換素子およびその製法 |
JPS6245168A (ja) * | 1985-08-23 | 1987-02-27 | Hitachi Vlsi Eng Corp | 半導体記憶装置 |
US5658828A (en) * | 1989-11-30 | 1997-08-19 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum contact through an insulating layer |
US5472912A (en) * | 1989-11-30 | 1995-12-05 | Sgs-Thomson Microelectronics, Inc. | Method of making an integrated circuit structure by using a non-conductive plug |
EP0430403A2 (en) * | 1989-11-30 | 1991-06-05 | STMicroelectronics, Inc. | Method for fabricating interlevel contacts |
US5976969A (en) * | 1989-11-30 | 1999-11-02 | Stmicroelectronics, Inc. | Method for forming an aluminum contact |
US6242811B1 (en) | 1989-11-30 | 2001-06-05 | Stmicroelectronics, Inc. | Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature |
US6271137B1 (en) | 1989-11-30 | 2001-08-07 | Stmicroelectronics, Inc. | Method of producing an aluminum stacked contact/via for multilayer |
US6617242B1 (en) * | 1989-11-30 | 2003-09-09 | Stmicroelectronics, Inc. | Method for fabricating interlevel contacts of aluminum/refractory metal alloys |
US5930673A (en) * | 1990-11-05 | 1999-07-27 | Stmicroelectronics, Inc. | Method for forming a metal contact |
US6287963B1 (en) | 1990-11-05 | 2001-09-11 | Stmicroelectronics, Inc. | Method for forming a metal contact |
US5374592A (en) * | 1992-09-22 | 1994-12-20 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum metal contact |
US6433435B2 (en) | 1993-11-30 | 2002-08-13 | Stmicroelectronics, Inc. | Aluminum contact structure for integrated circuits |
Also Published As
Publication number | Publication date |
---|---|
JPS6047739B2 (ja) | 1985-10-23 |
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