JPS5469088A - Capacitor - Google Patents

Capacitor

Info

Publication number
JPS5469088A
JPS5469088A JP13569777A JP13569777A JPS5469088A JP S5469088 A JPS5469088 A JP S5469088A JP 13569777 A JP13569777 A JP 13569777A JP 13569777 A JP13569777 A JP 13569777A JP S5469088 A JPS5469088 A JP S5469088A
Authority
JP
Japan
Prior art keywords
layer
gate
source
capacity
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13569777A
Other languages
Japanese (ja)
Inventor
Nobuaki Miyagawa
Toshimasa Kihara
Kiyoshi Matsubara
Kazuo Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13569777A priority Critical patent/JPS5469088A/en
Publication of JPS5469088A publication Critical patent/JPS5469088A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To reduce the area to the capacity value as well as to lower the threshold voltage at the channel part via the ion injection by securing the 3-layer structure through formation of the 1st capacitor with the gate layer and the diffusion layer plus the 2nd capacitor with the gate layer and the wiring layer respectively.
CONSTITUTION: Region 21 to be the source and the drain is formed on semiconductor substrate 20, and insulator layer 22 to form the channel is coates on substrate 20 between the source and drain regions. Then Si gate layer 23 is provided on layer 22, and the entire surface is coated with insulator layer 24. The opening is drilled to drain region 21 at one side, and Al wiring layer 25 is deposited with contact to the opening. As a result, CGS=C1.S2 is obtained for the gate-source capacity, where C1 is the gate-source capacity per unit area and S2 is the gate-A capacity. Thus, the full capacity is increased up to C'=(C1+C2)S2 by the parallel distribution of these gate, source and Al. Furthermore, the threshold level of the voltage is lowered with injection of the ion under layer 22.
COPYRIGHT: (C)1979,JPO&Japio
JP13569777A 1977-11-14 1977-11-14 Capacitor Pending JPS5469088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13569777A JPS5469088A (en) 1977-11-14 1977-11-14 Capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13569777A JPS5469088A (en) 1977-11-14 1977-11-14 Capacitor

Publications (1)

Publication Number Publication Date
JPS5469088A true JPS5469088A (en) 1979-06-02

Family

ID=15157781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13569777A Pending JPS5469088A (en) 1977-11-14 1977-11-14 Capacitor

Country Status (1)

Country Link
JP (1) JPS5469088A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267705A (en) * 1991-10-04 1993-10-15 Telefunken Syst Technik Ag Thin solar cell and method of manufacturing therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267705A (en) * 1991-10-04 1993-10-15 Telefunken Syst Technik Ag Thin solar cell and method of manufacturing therefor

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