JPS5469087A - Capacitor - Google Patents

Capacitor

Info

Publication number
JPS5469087A
JPS5469087A JP13569577A JP13569577A JPS5469087A JP S5469087 A JPS5469087 A JP S5469087A JP 13569577 A JP13569577 A JP 13569577A JP 13569577 A JP13569577 A JP 13569577A JP S5469087 A JPS5469087 A JP S5469087A
Authority
JP
Japan
Prior art keywords
gate
capacity
capacitor
layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13569577A
Other languages
Japanese (ja)
Inventor
Nobuaki Miyagawa
Toshimasa Kihara
Kiyoshi Matsubara
Hideo Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13569577A priority Critical patent/JPS5469087A/en
Publication of JPS5469087A publication Critical patent/JPS5469087A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the area required for the capacitor by securing the 3-layer structure for the logitudinal structure of the capacitor formed with the depression MOS transistor, and thus to reduce the chip area of the overall analog circuit using such capacitor. CONSTITUTION:Region 21 to be the source and drain is formed on semiconductor substrate 20 as if region 21 held substrate 20 in between, and insulator layer 22 is coated on substrate 20 to form the channel. Then Si gate layer 23 is provided on layer 22, and the entire surface is covered with insulator layer 24 with a through- hole drilled to drain region 21 at one side, and Al wiring layer 25 is deposited with contact to the hole. As a result, CGS=C1.S2 can be obtained for the source-gate capacity, where C1 is the source-gate capacity per unit area and S2 is the gate area respectively. Furthermore, the gate-Al capacity features CG-Al=C2.S2, where C2 is the gate-Al capacity, and the capacitor's full capacity becomes the sum (C1+ C2)S2. Thus, the chip area can be reduced to obtain the desired capacity.
JP13569577A 1977-11-14 1977-11-14 Capacitor Pending JPS5469087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13569577A JPS5469087A (en) 1977-11-14 1977-11-14 Capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13569577A JPS5469087A (en) 1977-11-14 1977-11-14 Capacitor

Publications (1)

Publication Number Publication Date
JPS5469087A true JPS5469087A (en) 1979-06-02

Family

ID=15157740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13569577A Pending JPS5469087A (en) 1977-11-14 1977-11-14 Capacitor

Country Status (1)

Country Link
JP (1) JPS5469087A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7239005B2 (en) 2003-07-18 2007-07-03 Yamaha Corporation Semiconductor device with bypass capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7239005B2 (en) 2003-07-18 2007-07-03 Yamaha Corporation Semiconductor device with bypass capacitor

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