JPS5463632A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5463632A
JPS5463632A JP12962677A JP12962677A JPS5463632A JP S5463632 A JPS5463632 A JP S5463632A JP 12962677 A JP12962677 A JP 12962677A JP 12962677 A JP12962677 A JP 12962677A JP S5463632 A JPS5463632 A JP S5463632A
Authority
JP
Japan
Prior art keywords
data lines
potential
memory
mosq3
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12962677A
Other languages
Japanese (ja)
Other versions
JPS586233B2 (en
Inventor
Kiyoo Ito
Hiroo Masuda
Ryoichi Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52129626A priority Critical patent/JPS586233B2/en
Publication of JPS5463632A publication Critical patent/JPS5463632A/en
Publication of JPS586233B2 publication Critical patent/JPS586233B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Abstract

PURPOSE:To make the potential fluctuation of the substrate as small as possible to prevent the malfunction of a transistor by making the chargeing and discharging speed of a pair of data lines equivalent to each other in the semiconductor memory using a MOS transistor. CONSTITUTION:Plural memory cells MC are connected to the first and the second data lines d0 and -d0 respectively, and memory cell MC is formed by the same size and materials as data lines d0 and -d0. Charging MOSQ3, Q6, -Q3 and -Q6 which are coupled with data lines d0 and -d0 and charge data lioes d0 and -d0 to a prescribed first potential are connected through connecting MOSQ0 and -Q0 which are connected to data lines d0 and -d0, and pre-amplifier PA is provided which detects higher- potential one of data lines d0 and -d0 after reading out a memory signal from memory cell MC. Further, discharging MOSQ4, Q5, -Q4 and -Q5 which make the potential difference between data lines D0 and -d0 equivalent approximately are provided correspondignly to MOSQ3 to -Q6 which charge selectively according to the output of pre-amplifier PA.
JP52129626A 1977-10-31 1977-10-31 memory Expired JPS586233B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52129626A JPS586233B2 (en) 1977-10-31 1977-10-31 memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52129626A JPS586233B2 (en) 1977-10-31 1977-10-31 memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58197693A Division JPS59107490A (en) 1983-10-24 1983-10-24 Memory

Publications (2)

Publication Number Publication Date
JPS5463632A true JPS5463632A (en) 1979-05-22
JPS586233B2 JPS586233B2 (en) 1983-02-03

Family

ID=15014127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52129626A Expired JPS586233B2 (en) 1977-10-31 1977-10-31 memory

Country Status (1)

Country Link
JP (1) JPS586233B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823388A (en) * 1981-08-05 1983-02-12 Nec Corp Memory device
EP0230385A2 (en) * 1986-01-17 1987-07-29 Kabushiki Kaisha Toshiba Semiconductor memory

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS615431U (en) * 1984-06-15 1986-01-13 株式会社 石田衡器製作所 Distributed table structure of combination weighing device
JPS62180814A (en) * 1986-01-31 1987-08-08 Shinko Electric Co Ltd Plate material for vibrator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823388A (en) * 1981-08-05 1983-02-12 Nec Corp Memory device
JPS63877B2 (en) * 1981-08-05 1988-01-08 Nippon Electric Co
EP0230385A2 (en) * 1986-01-17 1987-07-29 Kabushiki Kaisha Toshiba Semiconductor memory

Also Published As

Publication number Publication date
JPS586233B2 (en) 1983-02-03

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