JPS5456382A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS5456382A
JPS5456382A JP12032778A JP12032778A JPS5456382A JP S5456382 A JPS5456382 A JP S5456382A JP 12032778 A JP12032778 A JP 12032778A JP 12032778 A JP12032778 A JP 12032778A JP S5456382 A JPS5456382 A JP S5456382A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor memory
semiconductor
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12032778A
Other languages
English (en)
Inventor
Ai Kamin Seodora
Jii Sodeini Chiyaarusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Japan Inc
Original Assignee
Yokogawa Hewlett Packard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Hewlett Packard Ltd filed Critical Yokogawa Hewlett Packard Ltd
Publication of JPS5456382A publication Critical patent/JPS5456382A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP12032778A 1977-09-30 1978-09-29 Semiconductor memory cell Pending JPS5456382A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/838,199 US4163243A (en) 1977-09-30 1977-09-30 One-transistor memory cell with enhanced capacitance

Publications (1)

Publication Number Publication Date
JPS5456382A true JPS5456382A (en) 1979-05-07

Family

ID=25276528

Family Applications (2)

Application Number Title Priority Date Filing Date
JP12032778A Pending JPS5456382A (en) 1977-09-30 1978-09-29 Semiconductor memory cell
JP1983097373U Pending JPS5936262U (ja) 1977-09-30 1983-06-23 半導体メモリ素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP1983097373U Pending JPS5936262U (ja) 1977-09-30 1983-06-23 半導体メモリ素子

Country Status (3)

Country Link
US (1) US4163243A (ja)
JP (2) JPS5456382A (ja)
DE (1) DE2841453C2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126861A (ja) * 1983-12-13 1985-07-06 Fujitsu Ltd 半導体記憶装置
JPS60128658A (ja) * 1983-12-15 1985-07-09 Toshiba Corp 半導体記憶装置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
JPS6044752B2 (ja) * 1978-04-24 1985-10-05 日本電気株式会社 ダイナミツクメモリ
US4320312A (en) * 1978-10-02 1982-03-16 Hewlett-Packard Company Smaller memory cells and logic circuits
US4441246A (en) * 1980-05-07 1984-04-10 Texas Instruments Incorporated Method of making memory cell by selective oxidation of polysilicon
US5109258A (en) * 1980-05-07 1992-04-28 Texas Instruments Incorporated Memory cell made by selective oxidation of polysilicon
JPS5718356A (en) * 1980-07-07 1982-01-30 Mitsubishi Electric Corp Semiconductor memory storage
US4364075A (en) * 1980-09-02 1982-12-14 Intel Corporation CMOS Dynamic RAM cell and method of fabrication
US4373250A (en) * 1980-11-17 1983-02-15 Signetics Corporation Process for fabricating a high capacity memory cell
US4535349A (en) * 1981-12-31 1985-08-13 International Business Machines Corporation Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
US4887135A (en) * 1982-02-09 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Dual level polysilicon single transistor-capacitor memory array
US4542481A (en) * 1983-01-31 1985-09-17 International Business Machines Corporation One-device random access memory cell having enhanced capacitance
JPS61266206A (ja) * 1985-05-20 1986-11-25 Kobe Steel Ltd 連続混練機の混練制御装置
JPS6260256A (ja) * 1985-09-10 1987-03-16 Toshiba Corp 半導体記憶装置及びその製造方法
JPS62114265A (ja) * 1985-11-13 1987-05-26 Mitsubishi Electric Corp 半導体記憶装置
JP2655859B2 (ja) * 1988-02-03 1997-09-24 株式会社日立製作所 半導体記憶装置
US5465249A (en) * 1991-11-26 1995-11-07 Cree Research, Inc. Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US5217907A (en) * 1992-01-28 1993-06-08 National Semiconductor Corporation Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction
US5347226A (en) * 1992-11-16 1994-09-13 National Semiconductor Corporation Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction
US5714411A (en) * 1995-01-03 1998-02-03 Motorola, Inc. Process for forming a semiconductor device including a capacitor
US6066525A (en) * 1998-04-07 2000-05-23 Lsi Logic Corporation Method of forming DRAM capacitor by forming separate dielectric layers in a CMOS process
US7256415B2 (en) * 2005-05-31 2007-08-14 International Business Machines Corporation Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
FR2893763A1 (fr) * 2005-11-21 2007-05-25 St Microelectronics Sa Element de memoire non-volatile
WO2010114406A1 (ru) * 2009-03-30 2010-10-07 Murashev Viktor Nikolaevich Ячейка памяти для быстродействующего эсппзу и способ ее программирования

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740731A (en) * 1971-08-02 1973-06-19 Texas Instruments Inc One transistor dynamic memory cell
US3740732A (en) * 1971-08-12 1973-06-19 Texas Instruments Inc Dynamic data storage cell
JPS525224A (en) * 1975-07-02 1977-01-14 Hitachi Ltd 1trs-type memory cell
US4075045A (en) * 1976-02-09 1978-02-21 International Business Machines Corporation Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
JPS604595B2 (ja) * 1976-03-08 1985-02-05 日本電気株式会社 集積回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126861A (ja) * 1983-12-13 1985-07-06 Fujitsu Ltd 半導体記憶装置
JPH0562468B2 (ja) * 1983-12-13 1993-09-08 Fujitsu Ltd
JPS60128658A (ja) * 1983-12-15 1985-07-09 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
DE2841453A1 (de) 1979-04-12
JPS5936262U (ja) 1984-03-07
US4163243A (en) 1979-07-31
DE2841453C2 (de) 1982-07-22

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