JPS5427733A - Semiconductor memory tester - Google Patents

Semiconductor memory tester

Info

Publication number
JPS5427733A
JPS5427733A JP9500678A JP9500678A JPS5427733A JP S5427733 A JPS5427733 A JP S5427733A JP 9500678 A JP9500678 A JP 9500678A JP 9500678 A JP9500678 A JP 9500678A JP S5427733 A JPS5427733 A JP S5427733A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory tester
tester
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9500678A
Other languages
Japanese (ja)
Inventor
Aran Hoon Maaton
Aren Poujimiraa Toomasu
Aran Buriruhaato Buruusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sperry Corp
Original Assignee
Sperry Rand Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/821,272 external-priority patent/US4127901A/en
Priority claimed from US05/821,271 external-priority patent/US4130897A/en
Application filed by Sperry Rand Corp filed Critical Sperry Rand Corp
Publication of JPS5427733A publication Critical patent/JPS5427733A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP9500678A 1977-08-03 1978-08-03 Semiconductor memory tester Pending JPS5427733A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/821,272 US4127901A (en) 1977-08-03 1977-08-03 MNOS FET memory retention characterization test circuit
US05/821,271 US4130897A (en) 1977-08-03 1977-08-03 MNOS FET memory retention characterization test circuit with enhanced sensitivity and power conservation

Publications (1)

Publication Number Publication Date
JPS5427733A true JPS5427733A (en) 1979-03-02

Family

ID=27124528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9500678A Pending JPS5427733A (en) 1977-08-03 1978-08-03 Semiconductor memory tester

Country Status (4)

Country Link
JP (1) JPS5427733A (en)
DE (1) DE2833828A1 (en)
FR (1) FR2399712A1 (en)
GB (1) GB2002129B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117034A (en) * 1979-02-28 1980-09-09 Yamaha Motor Co Ltd Apparatus for inhibiting rotation of rotatable part of engine

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253059A (en) * 1979-05-14 1981-02-24 Fairchild Camera & Instrument Corp. EPROM Reliability test circuit
KR940006676B1 (en) * 1991-10-14 1994-07-25 삼성전자 주식회사 Semiconductor ic having test cirucit for memory

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795859A (en) * 1972-07-03 1974-03-05 Ibm Method and apparatus for determining the electrical characteristics of a memory cell having field effect transistors
JPS5321984B2 (en) * 1973-07-13 1978-07-06
US3824564A (en) * 1973-07-19 1974-07-16 Sperry Rand Corp Integrated threshold mnos memory with decoder and operating sequence

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117034A (en) * 1979-02-28 1980-09-09 Yamaha Motor Co Ltd Apparatus for inhibiting rotation of rotatable part of engine

Also Published As

Publication number Publication date
GB2002129A (en) 1979-02-14
FR2399712A1 (en) 1979-03-02
GB2002129B (en) 1982-01-20
DE2833828A1 (en) 1979-02-08

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