JPS5425171A - Manufacture of field effect semiconductor device - Google Patents

Manufacture of field effect semiconductor device

Info

Publication number
JPS5425171A
JPS5425171A JP9014277A JP9014277A JPS5425171A JP S5425171 A JPS5425171 A JP S5425171A JP 9014277 A JP9014277 A JP 9014277A JP 9014277 A JP9014277 A JP 9014277A JP S5425171 A JPS5425171 A JP S5425171A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
field effect
effect semiconductor
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9014277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5751985B2 (enrdf_load_stackoverflow
Inventor
Koichiro Kotani
Hidetake Suzuki
Tatsuo Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9014277A priority Critical patent/JPS5425171A/ja
Publication of JPS5425171A publication Critical patent/JPS5425171A/ja
Publication of JPS5751985B2 publication Critical patent/JPS5751985B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9014277A 1977-07-27 1977-07-27 Manufacture of field effect semiconductor device Granted JPS5425171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9014277A JPS5425171A (en) 1977-07-27 1977-07-27 Manufacture of field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9014277A JPS5425171A (en) 1977-07-27 1977-07-27 Manufacture of field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5425171A true JPS5425171A (en) 1979-02-24
JPS5751985B2 JPS5751985B2 (enrdf_load_stackoverflow) 1982-11-05

Family

ID=13990251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9014277A Granted JPS5425171A (en) 1977-07-27 1977-07-27 Manufacture of field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5425171A (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110225A (en) * 1980-02-05 1981-09-01 Nec Corp Manufacture of gaas wafer
JPS5879770A (ja) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5879719A (ja) * 1981-11-05 1983-05-13 Sumitomo Electric Ind Ltd 半導体結晶への不純物ド−ピング方法
JPS5880873A (ja) * 1981-11-09 1983-05-16 Sumitomo Electric Ind Ltd シヨツトキゲ−ト型電界トランジスタおよびその製造方法
JPS58206167A (ja) * 1982-05-26 1983-12-01 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS5972774A (ja) * 1982-10-19 1984-04-24 Mitsubishi Electric Corp ガリウム・ヒ素電界効果トランジスタ
JPS6024064A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6024065A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 電界効果トランジスタの製造方法
JPS6077467A (ja) * 1983-10-04 1985-05-02 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPS60100472A (ja) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp 電界効果トランジスタ
JPS60110172A (ja) * 1983-11-21 1985-06-15 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS60164365A (ja) * 1984-02-06 1985-08-27 Fujitsu Ltd 半導体装置の製造方法
JPS60227478A (ja) * 1984-04-26 1985-11-12 Nec Corp 電界効果型トランジスタ
JPS61101080A (ja) * 1984-10-24 1986-05-19 Hitachi Ltd 電界効果トランジスタ
JPH0249438A (ja) * 1989-03-18 1990-02-19 Fujitsu Ltd 半導体装置の製造方法
JPH0513444A (ja) * 1991-10-23 1993-01-22 Hitachi Ltd 電界効果トランジスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946874A (enrdf_load_stackoverflow) * 1972-09-11 1974-05-07
JPS5012985A (enrdf_load_stackoverflow) * 1973-06-01 1975-02-10
JPS5012983A (enrdf_load_stackoverflow) * 1973-05-28 1975-02-10

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946874A (enrdf_load_stackoverflow) * 1972-09-11 1974-05-07
JPS5012983A (enrdf_load_stackoverflow) * 1973-05-28 1975-02-10
JPS5012985A (enrdf_load_stackoverflow) * 1973-06-01 1975-02-10

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110225A (en) * 1980-02-05 1981-09-01 Nec Corp Manufacture of gaas wafer
JPS5879719A (ja) * 1981-11-05 1983-05-13 Sumitomo Electric Ind Ltd 半導体結晶への不純物ド−ピング方法
JPS5879770A (ja) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5880873A (ja) * 1981-11-09 1983-05-16 Sumitomo Electric Ind Ltd シヨツトキゲ−ト型電界トランジスタおよびその製造方法
JPS58206167A (ja) * 1982-05-26 1983-12-01 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS5972774A (ja) * 1982-10-19 1984-04-24 Mitsubishi Electric Corp ガリウム・ヒ素電界効果トランジスタ
JPS6024064A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6024065A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 電界効果トランジスタの製造方法
JPS6077467A (ja) * 1983-10-04 1985-05-02 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPS60100472A (ja) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp 電界効果トランジスタ
JPS60110172A (ja) * 1983-11-21 1985-06-15 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS60164365A (ja) * 1984-02-06 1985-08-27 Fujitsu Ltd 半導体装置の製造方法
JPS60227478A (ja) * 1984-04-26 1985-11-12 Nec Corp 電界効果型トランジスタ
JPS61101080A (ja) * 1984-10-24 1986-05-19 Hitachi Ltd 電界効果トランジスタ
JPH0249438A (ja) * 1989-03-18 1990-02-19 Fujitsu Ltd 半導体装置の製造方法
JPH0513444A (ja) * 1991-10-23 1993-01-22 Hitachi Ltd 電界効果トランジスタ

Also Published As

Publication number Publication date
JPS5751985B2 (enrdf_load_stackoverflow) 1982-11-05

Similar Documents

Publication Publication Date Title
JPS5425171A (en) Manufacture of field effect semiconductor device
JPS5223277A (en) Method of manufacteuring insulating gate type field effect transistor
JPS52101984A (en) Preparation of semiconductor device
JPS5412573A (en) Junction type field effect transistor and production of the same
JPS52137922A (en) Solid photographing device
JPS5215274A (en) Semiconductor device
JPS5718364A (en) Mis field-effect transistor
JPS5437584A (en) Field effect semiconductor device of insulation gate type
JPS5286779A (en) Semiconductor device
JPS5415681A (en) Manufacture of field effect transistor
JPS5380172A (en) Semiconductor device
JPS53125777A (en) Manufacture for field effect transistor
JPS53104183A (en) Junction gate-type field effect transistor
JPS5212583A (en) Field effect transistor
JPS5366179A (en) Semiconductor device
JPS5435684A (en) Junction type field effect transistor
JPS52127078A (en) Semiconductor device
JPS53100779A (en) Production of insulated gate type semiconductor device
JPS5418685A (en) Manufacture of field effect type semiconductor device
JPS5412274A (en) Electrostatic induction field effect transistor
JPS53120282A (en) Electrode formation method for schottky barrier gate field effect transisto r
JPS5371573A (en) Field effect transistor of isolating gate type
JPS52146186A (en) Semiconductor device
JPS5412566A (en) Production of semiconductor device
JPS5268383A (en) Manufacture of semiconductor device