JPS5751985B2 - - Google Patents
Info
- Publication number
- JPS5751985B2 JPS5751985B2 JP52090142A JP9014277A JPS5751985B2 JP S5751985 B2 JPS5751985 B2 JP S5751985B2 JP 52090142 A JP52090142 A JP 52090142A JP 9014277 A JP9014277 A JP 9014277A JP S5751985 B2 JPS5751985 B2 JP S5751985B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9014277A JPS5425171A (en) | 1977-07-27 | 1977-07-27 | Manufacture of field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9014277A JPS5425171A (en) | 1977-07-27 | 1977-07-27 | Manufacture of field effect semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5425171A JPS5425171A (en) | 1979-02-24 |
| JPS5751985B2 true JPS5751985B2 (enrdf_load_stackoverflow) | 1982-11-05 |
Family
ID=13990251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9014277A Granted JPS5425171A (en) | 1977-07-27 | 1977-07-27 | Manufacture of field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5425171A (enrdf_load_stackoverflow) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56110225A (en) * | 1980-02-05 | 1981-09-01 | Nec Corp | Manufacture of gaas wafer |
| JPS5880873A (ja) * | 1981-11-09 | 1983-05-16 | Sumitomo Electric Ind Ltd | シヨツトキゲ−ト型電界トランジスタおよびその製造方法 |
| JPS5879770A (ja) * | 1981-11-06 | 1983-05-13 | Sumitomo Electric Ind Ltd | シヨツトキゲ−ト電界効果トランジスタ |
| JPS5879719A (ja) * | 1981-11-05 | 1983-05-13 | Sumitomo Electric Ind Ltd | 半導体結晶への不純物ド−ピング方法 |
| JPS58206167A (ja) * | 1982-05-26 | 1983-12-01 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタの製造方法 |
| JPS5972774A (ja) * | 1982-10-19 | 1984-04-24 | Mitsubishi Electric Corp | ガリウム・ヒ素電界効果トランジスタ |
| JPS6024064A (ja) * | 1983-07-20 | 1985-02-06 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
| JPS6024065A (ja) * | 1983-07-20 | 1985-02-06 | Agency Of Ind Science & Technol | 電界効果トランジスタの製造方法 |
| JPS6077467A (ja) * | 1983-10-04 | 1985-05-02 | Oki Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
| JPS60100472A (ja) * | 1983-11-05 | 1985-06-04 | Mitsubishi Electric Corp | 電界効果トランジスタ |
| JPS60110172A (ja) * | 1983-11-21 | 1985-06-15 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| JPS60164365A (ja) * | 1984-02-06 | 1985-08-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2641189B2 (ja) * | 1984-04-26 | 1997-08-13 | 日本電気株式会社 | 電界効果型トランジスタ |
| JP2550013B2 (ja) * | 1984-10-24 | 1996-10-30 | 株式会社日立製作所 | 電界効果トランジスタ |
| JPH0249438A (ja) * | 1989-03-18 | 1990-02-19 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0513444A (ja) * | 1991-10-23 | 1993-01-22 | Hitachi Ltd | 電界効果トランジスタ |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946874A (enrdf_load_stackoverflow) * | 1972-09-11 | 1974-05-07 | ||
| JPS5012983A (enrdf_load_stackoverflow) * | 1973-05-28 | 1975-02-10 | ||
| JPS5012985A (enrdf_load_stackoverflow) * | 1973-06-01 | 1975-02-10 |
-
1977
- 1977-07-27 JP JP9014277A patent/JPS5425171A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5425171A (en) | 1979-02-24 |