JPS5751985B2 - - Google Patents

Info

Publication number
JPS5751985B2
JPS5751985B2 JP52090142A JP9014277A JPS5751985B2 JP S5751985 B2 JPS5751985 B2 JP S5751985B2 JP 52090142 A JP52090142 A JP 52090142A JP 9014277 A JP9014277 A JP 9014277A JP S5751985 B2 JPS5751985 B2 JP S5751985B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52090142A
Other languages
Japanese (ja)
Other versions
JPS5425171A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9014277A priority Critical patent/JPS5425171A/ja
Publication of JPS5425171A publication Critical patent/JPS5425171A/ja
Publication of JPS5751985B2 publication Critical patent/JPS5751985B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9014277A 1977-07-27 1977-07-27 Manufacture of field effect semiconductor device Granted JPS5425171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9014277A JPS5425171A (en) 1977-07-27 1977-07-27 Manufacture of field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9014277A JPS5425171A (en) 1977-07-27 1977-07-27 Manufacture of field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5425171A JPS5425171A (en) 1979-02-24
JPS5751985B2 true JPS5751985B2 (enrdf_load_stackoverflow) 1982-11-05

Family

ID=13990251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9014277A Granted JPS5425171A (en) 1977-07-27 1977-07-27 Manufacture of field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5425171A (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110225A (en) * 1980-02-05 1981-09-01 Nec Corp Manufacture of gaas wafer
JPS5880873A (ja) * 1981-11-09 1983-05-16 Sumitomo Electric Ind Ltd シヨツトキゲ−ト型電界トランジスタおよびその製造方法
JPS5879770A (ja) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5879719A (ja) * 1981-11-05 1983-05-13 Sumitomo Electric Ind Ltd 半導体結晶への不純物ド−ピング方法
JPS58206167A (ja) * 1982-05-26 1983-12-01 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS5972774A (ja) * 1982-10-19 1984-04-24 Mitsubishi Electric Corp ガリウム・ヒ素電界効果トランジスタ
JPS6024064A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6024065A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 電界効果トランジスタの製造方法
JPS6077467A (ja) * 1983-10-04 1985-05-02 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPS60100472A (ja) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp 電界効果トランジスタ
JPS60110172A (ja) * 1983-11-21 1985-06-15 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS60164365A (ja) * 1984-02-06 1985-08-27 Fujitsu Ltd 半導体装置の製造方法
JP2641189B2 (ja) * 1984-04-26 1997-08-13 日本電気株式会社 電界効果型トランジスタ
JP2550013B2 (ja) * 1984-10-24 1996-10-30 株式会社日立製作所 電界効果トランジスタ
JPH0249438A (ja) * 1989-03-18 1990-02-19 Fujitsu Ltd 半導体装置の製造方法
JPH0513444A (ja) * 1991-10-23 1993-01-22 Hitachi Ltd 電界効果トランジスタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946874A (enrdf_load_stackoverflow) * 1972-09-11 1974-05-07
JPS5012983A (enrdf_load_stackoverflow) * 1973-05-28 1975-02-10
JPS5012985A (enrdf_load_stackoverflow) * 1973-06-01 1975-02-10

Also Published As

Publication number Publication date
JPS5425171A (en) 1979-02-24

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