JPS54160187A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54160187A JPS54160187A JP6955878A JP6955878A JPS54160187A JP S54160187 A JPS54160187 A JP S54160187A JP 6955878 A JP6955878 A JP 6955878A JP 6955878 A JP6955878 A JP 6955878A JP S54160187 A JPS54160187 A JP S54160187A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- emitter
- contact
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6955878A JPS54160187A (en) | 1978-06-08 | 1978-06-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6955878A JPS54160187A (en) | 1978-06-08 | 1978-06-08 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54160187A true JPS54160187A (en) | 1979-12-18 |
Family
ID=13406189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6955878A Pending JPS54160187A (en) | 1978-06-08 | 1978-06-08 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54160187A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5533009A (en) * | 1978-08-29 | 1980-03-08 | Toshiba Corp | Semiconductor integrated circuit |
-
1978
- 1978-06-08 JP JP6955878A patent/JPS54160187A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5533009A (en) * | 1978-08-29 | 1980-03-08 | Toshiba Corp | Semiconductor integrated circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1169188A (en) | Method of Manufacturing Semiconductor Devices | |
JPS54160187A (en) | Semiconductor device | |
JPS5596675A (en) | Semiconductor device | |
JPS5687360A (en) | Transistor device | |
JPS5534462A (en) | Method and apparatus for semiconductor | |
JPS5762552A (en) | Manufacture of semiconductor device | |
JPS55107261A (en) | Semiconductor integrated circuit device | |
JPS5527682A (en) | Semiconductor device | |
JP2513474B2 (ja) | 半導体集積回路 | |
JPS54142080A (en) | Semiconductor device | |
JPS5533007A (en) | Semiconductor intergated circuit | |
JPS55102263A (en) | Semiconductor integrated circuit | |
JPS5750473A (en) | Semiconductor integrated circuit device | |
JPS5596671A (en) | Semiconductor device | |
JPS56135965A (en) | Semiconductor device | |
JPS5570064A (en) | Multi-collector type transistor | |
JPS54137283A (en) | Lateral pnp transistor | |
JPS6453572A (en) | Semiconductor integrated circuit device with bipolar element | |
JPS54137282A (en) | Lateral transistor | |
JPS572580A (en) | Semiconductor device | |
JPS5640273A (en) | Semiconductor device and preparation of the same | |
JPS5618464A (en) | Semiconductor device | |
JPS54140484A (en) | Semiconductor integrated circuit device | |
JPS54127683A (en) | Planar-type transistor | |
JPS55117258A (en) | Fabrication of semiconductor device |