JPS54158868A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54158868A
JPS54158868A JP6847278A JP6847278A JPS54158868A JP S54158868 A JPS54158868 A JP S54158868A JP 6847278 A JP6847278 A JP 6847278A JP 6847278 A JP6847278 A JP 6847278A JP S54158868 A JPS54158868 A JP S54158868A
Authority
JP
Japan
Prior art keywords
plasma etching
electric field
pattern
short part
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6847278A
Other languages
Japanese (ja)
Inventor
Masaru Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6847278A priority Critical patent/JPS54158868A/en
Publication of JPS54158868A publication Critical patent/JPS54158868A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To form an extremely-fine punched pattern without making a short part by carrying out plasma etching while applying an electric field to the punched pattern for a conductive material.
CONSTITUTION: A conductive material such as a poly-crystal silicon film formed on a semiconductor substrate is applied with photosensitive resin and mask exposure and 1st etching are carried out sequentially. Then the 2nd plasma etching of semiconductor substrate 5 formed in this process is done by the plasma etching unit while a fixed electric field is applied by electrode 4. In this process, the convergence of the electric field occurs to the protruding part and short part of the pattern so as to increase greatly the speed of plasma etching, so that an extremely fine punched pattern can be formed with no short part.
COPYRIGHT: (C)1979,JPO&Japio
JP6847278A 1978-06-06 1978-06-06 Manufacture of semiconductor device Pending JPS54158868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6847278A JPS54158868A (en) 1978-06-06 1978-06-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6847278A JPS54158868A (en) 1978-06-06 1978-06-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54158868A true JPS54158868A (en) 1979-12-15

Family

ID=13374659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6847278A Pending JPS54158868A (en) 1978-06-06 1978-06-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54158868A (en)

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