JPS54146955A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54146955A
JPS54146955A JP5576878A JP5576878A JPS54146955A JP S54146955 A JPS54146955 A JP S54146955A JP 5576878 A JP5576878 A JP 5576878A JP 5576878 A JP5576878 A JP 5576878A JP S54146955 A JPS54146955 A JP S54146955A
Authority
JP
Japan
Prior art keywords
thickness
face
wafer
finishing
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5576878A
Other languages
Japanese (ja)
Inventor
Masao Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5576878A priority Critical patent/JPS54146955A/en
Publication of JPS54146955A publication Critical patent/JPS54146955A/en
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE: To make the finishing thickness uniform and shorten the polishing time by providing previously grooves on the reverse face and finishing the semiconductor wafer into a desired thickness by mechanical polishing when the thickness of the semiconductor wafer is made small by eliminating the reverse face.
CONSTITUTION: After many semiconductor elements 2 are formed on one face of Si wafer 1, plural rows of groove 3 are formed laterally and longitudinally on the other face by a dicing saw. At this time, the interval of grooves is defined as a pitch such as 10mm, and grooves are approximately 2mm wide, and the depth is shallower than the final finishing thickness by approximately 10μm. After that, this face is polished mechanically to make the thickness of wafer 1 into a desired one. Thus, polishing materials are distributed uniformly on the surface of wafer 1 at a polishing time, and the finishing precision is improved, and the polishing time is shortened by approximately 30%.
COPYRIGHT: (C)1979,JPO&Japio
JP5576878A 1978-05-10 1978-05-10 Production of semiconductor device Pending JPS54146955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5576878A JPS54146955A (en) 1978-05-10 1978-05-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5576878A JPS54146955A (en) 1978-05-10 1978-05-10 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54146955A true JPS54146955A (en) 1979-11-16

Family

ID=13008036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5576878A Pending JPS54146955A (en) 1978-05-10 1978-05-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54146955A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489555A (en) * 1992-04-16 1996-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming a photoelectric conversion device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489555A (en) * 1992-04-16 1996-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming a photoelectric conversion device

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