JPS51121256A - Production method for semiconductor devices - Google Patents

Production method for semiconductor devices

Info

Publication number
JPS51121256A
JPS51121256A JP4678575A JP4678575A JPS51121256A JP S51121256 A JPS51121256 A JP S51121256A JP 4678575 A JP4678575 A JP 4678575A JP 4678575 A JP4678575 A JP 4678575A JP S51121256 A JPS51121256 A JP S51121256A
Authority
JP
Japan
Prior art keywords
production method
semiconductor devices
base board
diffusion
reproductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4678575A
Other languages
Japanese (ja)
Other versions
JPS5522016B2 (en
Inventor
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4678575A priority Critical patent/JPS51121256A/en
Publication of JPS51121256A publication Critical patent/JPS51121256A/en
Publication of JPS5522016B2 publication Critical patent/JPS5522016B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To provide a method of mass producing diffusion layers with superior reproductivity without sacrificing crystalline characteristics by carring out diffusion treatment with an insulator material, in which an impurities diffusion source and base board composition elements have been added, applied to the surface of the base board.
COPYRIGHT: (C)1976,JPO&Japio
JP4678575A 1975-04-16 1975-04-16 Production method for semiconductor devices Granted JPS51121256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4678575A JPS51121256A (en) 1975-04-16 1975-04-16 Production method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4678575A JPS51121256A (en) 1975-04-16 1975-04-16 Production method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS51121256A true JPS51121256A (en) 1976-10-23
JPS5522016B2 JPS5522016B2 (en) 1980-06-13

Family

ID=12756973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4678575A Granted JPS51121256A (en) 1975-04-16 1975-04-16 Production method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS51121256A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211907A (en) * 1984-04-06 1985-10-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of inp solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211907A (en) * 1984-04-06 1985-10-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of inp solar cell

Also Published As

Publication number Publication date
JPS5522016B2 (en) 1980-06-13

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