JPS54129973A - Formation method of electrode of semiconductor element - Google Patents

Formation method of electrode of semiconductor element

Info

Publication number
JPS54129973A
JPS54129973A JP3777278A JP3777278A JPS54129973A JP S54129973 A JPS54129973 A JP S54129973A JP 3777278 A JP3777278 A JP 3777278A JP 3777278 A JP3777278 A JP 3777278A JP S54129973 A JPS54129973 A JP S54129973A
Authority
JP
Japan
Prior art keywords
layer
electrode
gold
semiconductor element
formation method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3777278A
Other languages
Japanese (ja)
Inventor
Kyozo Ide
Masao Obara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3777278A priority Critical patent/JPS54129973A/en
Publication of JPS54129973A publication Critical patent/JPS54129973A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To mass-produce easily a three-layer electrode of high accuracy and high reliability, by eliminating a shift in position by photoetching once.
CONSTITUTION: On the side of insulation layer 3 of the semiconductor element, layer 5 of Ti, Cr, etc., and hard-to-oxidize layer 6 of Pt, Pd, etc., are stacked. After layer 6 is selectively removed through the resist mask, oxide layer 5' is made on layer 5 by an O2 plasma process. Next, a cathode is conncted to layer 5 penetrating layer 5' at a desirable point, and the element is dipped in a gold-plating solution for electric plating, so that gold layer 7 will be selectively deposited on layer 6. Next, etching is carried out with gold layer 7 taken as a mask to expose layer 3, so that a fine and highly-precise three-layer-structured electrode will be completed. The process is simple because of single photoetching.
COPYRIGHT: (C)1979,JPO&Japio
JP3777278A 1978-03-31 1978-03-31 Formation method of electrode of semiconductor element Pending JPS54129973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3777278A JPS54129973A (en) 1978-03-31 1978-03-31 Formation method of electrode of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3777278A JPS54129973A (en) 1978-03-31 1978-03-31 Formation method of electrode of semiconductor element

Publications (1)

Publication Number Publication Date
JPS54129973A true JPS54129973A (en) 1979-10-08

Family

ID=12506753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3777278A Pending JPS54129973A (en) 1978-03-31 1978-03-31 Formation method of electrode of semiconductor element

Country Status (1)

Country Link
JP (1) JPS54129973A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501461A (en) * 1973-05-10 1975-01-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501461A (en) * 1973-05-10 1975-01-09

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