JPS54118188A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS54118188A
JPS54118188A JP2635678A JP2635678A JPS54118188A JP S54118188 A JPS54118188 A JP S54118188A JP 2635678 A JP2635678 A JP 2635678A JP 2635678 A JP2635678 A JP 2635678A JP S54118188 A JPS54118188 A JP S54118188A
Authority
JP
Japan
Prior art keywords
mask
layer
reaching
proton
irradiation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2635678A
Other languages
Japanese (ja)
Inventor
Rangu.Roi
Shinsuke Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2635678A priority Critical patent/JPS54118188A/en
Priority to US06/014,012 priority patent/US4309668A/en
Publication of JPS54118188A publication Critical patent/JPS54118188A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To secure the uniform carrier distribution for the active layer as well as to secure the refractive index difference at the center to ensure the steady operation by providing the thin mask which is thick at its both ends and thin at the center to the central part of the surface of the substrate featuring the 5-layer structure to form the semiconductor layer and then irradiating the proton via the thin mask.
CONSTITUTION: N-type AlGaAs layer 11, N-type GaAs active layer 12, P-type AlGaAs layer 13 and P-type GaAs layer 14 are grown on N-type GaAs substrate 10 via the liquid-phase epitaxial method. Then shielding mask 15 composed of the resist or the like is formed at the central part of the surface of layer 14, and furthermore shielding mask 16 is put onto mask 15 at the both ends. After this, the proton is irradiated via the energy which transmits through only mask 15 with the heat treatment to form irradiation region 17 reaching the bottom part of layer 12 under mask 15 as well as irradiation region 18 reaching the middle of layer 11 outside mask 15 respectively. Then the temperature is lowered down to the room temperature to lessen the energy, and proton irradiation region 19 reaching the bottom of layer 12 is formed across mask 15. Both mask 15 and 16 are then removed to recover the damage through the heat treatment.
COPYRIGHT: (C)1979,JPO&Japio
JP2635678A 1978-02-20 1978-03-07 Manufacture of semiconductor laser Pending JPS54118188A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2635678A JPS54118188A (en) 1978-03-07 1978-03-07 Manufacture of semiconductor laser
US06/014,012 US4309668A (en) 1978-02-20 1979-02-21 Stripe-geometry double heterojunction laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2635678A JPS54118188A (en) 1978-03-07 1978-03-07 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS54118188A true JPS54118188A (en) 1979-09-13

Family

ID=12191190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2635678A Pending JPS54118188A (en) 1978-02-20 1978-03-07 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS54118188A (en)

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