JPS5326587A - Production of buried channel charge transfer unit - Google Patents

Production of buried channel charge transfer unit

Info

Publication number
JPS5326587A
JPS5326587A JP10085376A JP10085376A JPS5326587A JP S5326587 A JPS5326587 A JP S5326587A JP 10085376 A JP10085376 A JP 10085376A JP 10085376 A JP10085376 A JP 10085376A JP S5326587 A JPS5326587 A JP S5326587A
Authority
JP
Japan
Prior art keywords
production
transfer unit
charge transfer
buried channel
channel charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10085376A
Other languages
Japanese (ja)
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10085376A priority Critical patent/JPS5326587A/en
Publication of JPS5326587A publication Critical patent/JPS5326587A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Abstract

PURPOSE:The resistance film which becones a resistance against passage of impurity ions is made thinner in the charge accumulation part of a channel and thicker in the charge barrier part, and is caused to adhere on a semiconductor substrate. Then, impurity ions are injected through this, so that the accumulation part and the barrier aprt can be formed in one ion injection process simultaneously.
JP10085376A 1976-08-24 1976-08-24 Production of buried channel charge transfer unit Pending JPS5326587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10085376A JPS5326587A (en) 1976-08-24 1976-08-24 Production of buried channel charge transfer unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10085376A JPS5326587A (en) 1976-08-24 1976-08-24 Production of buried channel charge transfer unit

Publications (1)

Publication Number Publication Date
JPS5326587A true JPS5326587A (en) 1978-03-11

Family

ID=14284860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10085376A Pending JPS5326587A (en) 1976-08-24 1976-08-24 Production of buried channel charge transfer unit

Country Status (1)

Country Link
JP (1) JPS5326587A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292671A (en) * 1987-10-08 1994-03-08 Matsushita Electric Industrial, Co., Ltd. Method of manufacture for semiconductor device by forming deep and shallow regions
US5302543A (en) * 1989-11-06 1994-04-12 Mitsubishi Denki Kabushiki Kaisha Method of making a charge coupled device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292671A (en) * 1987-10-08 1994-03-08 Matsushita Electric Industrial, Co., Ltd. Method of manufacture for semiconductor device by forming deep and shallow regions
US5302543A (en) * 1989-11-06 1994-04-12 Mitsubishi Denki Kabushiki Kaisha Method of making a charge coupled device

Similar Documents

Publication Publication Date Title
JPS5324789A (en) Production of semiconductor device
JPS5326587A (en) Production of buried channel charge transfer unit
JPS5470762A (en) Semiconductor device
JPS5335481A (en) Production of insulating gate type field effect transistor
JPS53149771A (en) Mis-type semiconductor device and its manufacture
JPS56138951A (en) Manufacture of semiconductor memory device
JPS53125781A (en) Manufacture for semiconductor device
JPS52115669A (en) Semiconductor memory device
JPS57130473A (en) Mos type semiconductor memory storage
JPS54131887A (en) Manufacture of bipolar cmos-type integrated circuit
JPS5389685A (en) Production of semiconductor memory element
JPS54114984A (en) Semiconductor device
JPS5516480A (en) Insulating gate electrostatic effect transistor and semiconductor integrated circuit device
JPS5380A (en) Manufacture of semiconductor device
JPS5372470A (en) Semiconductor device
JPS5673470A (en) Manufacture of semiconductor device
JPS5736863A (en) Manufacture of semiconductor device
JPS5258489A (en) Production of semiconductor memory element
JPS52123878A (en) Mos type semiconductor device and its production process
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5780759A (en) Complementary connection insulated gate type field effect transistor integrated circuit
JPS5718366A (en) Manufacture of semiconductor device
JPS5492172A (en) Semiconductor device
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS5219978A (en) Manufacture process for a semiconductor device