JPS5320869A - High breakdown voltage semiconductor device - Google Patents

High breakdown voltage semiconductor device

Info

Publication number
JPS5320869A
JPS5320869A JP9553376A JP9553376A JPS5320869A JP S5320869 A JPS5320869 A JP S5320869A JP 9553376 A JP9553376 A JP 9553376A JP 9553376 A JP9553376 A JP 9553376A JP S5320869 A JPS5320869 A JP S5320869A
Authority
JP
Japan
Prior art keywords
semiconductor device
breakdown voltage
high breakdown
voltage semiconductor
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9553376A
Other languages
Japanese (ja)
Inventor
Masaaki Kobayashi
Seikichi Tsutsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9553376A priority Critical patent/JPS5320869A/en
Publication of JPS5320869A publication Critical patent/JPS5320869A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: A planar type semiconductor device of a high breakdown voltage is obtained at a high yield by providing etched grooves to surface channel preventing region forming flat surface in the same manner as for conventional planar type semiconductor devices by an ordinary diffusion method.
COPYRIGHT: (C)1978,JPO&Japio
JP9553376A 1976-08-11 1976-08-11 High breakdown voltage semiconductor device Pending JPS5320869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9553376A JPS5320869A (en) 1976-08-11 1976-08-11 High breakdown voltage semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9553376A JPS5320869A (en) 1976-08-11 1976-08-11 High breakdown voltage semiconductor device

Publications (1)

Publication Number Publication Date
JPS5320869A true JPS5320869A (en) 1978-02-25

Family

ID=14140184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9553376A Pending JPS5320869A (en) 1976-08-11 1976-08-11 High breakdown voltage semiconductor device

Country Status (1)

Country Link
JP (1) JPS5320869A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922085A (en) * 1972-06-19 1974-02-27
JPS5030483A (en) * 1973-07-13 1975-03-26
JPS51108784A (en) * 1975-03-20 1976-09-27 Shindengen Electric Mfg HANDOTA ISOCHI

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922085A (en) * 1972-06-19 1974-02-27
JPS5030483A (en) * 1973-07-13 1975-03-26
JPS51108784A (en) * 1975-03-20 1976-09-27 Shindengen Electric Mfg HANDOTA ISOCHI

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