JPS53148347A - Dynamic memory unit - Google Patents

Dynamic memory unit

Info

Publication number
JPS53148347A
JPS53148347A JP6381577A JP6381577A JPS53148347A JP S53148347 A JPS53148347 A JP S53148347A JP 6381577 A JP6381577 A JP 6381577A JP 6381577 A JP6381577 A JP 6381577A JP S53148347 A JPS53148347 A JP S53148347A
Authority
JP
Japan
Prior art keywords
memory unit
dynamic memory
generating circuit
refresh
amfplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6381577A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Kazunori Ouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6381577A priority Critical patent/JPS53148347A/en
Publication of JPS53148347A publication Critical patent/JPS53148347A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To perform refresh every cycle of readout and write-in, by providng address buffer decoder, data input and output circuit and its driving internal signal generating circuit, and internal address generating circuit for refresh in the semiconductor chip providing memory cells and a sense amfplifier.
JP6381577A 1977-05-31 1977-05-31 Dynamic memory unit Pending JPS53148347A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6381577A JPS53148347A (en) 1977-05-31 1977-05-31 Dynamic memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6381577A JPS53148347A (en) 1977-05-31 1977-05-31 Dynamic memory unit

Publications (1)

Publication Number Publication Date
JPS53148347A true JPS53148347A (en) 1978-12-23

Family

ID=13240232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6381577A Pending JPS53148347A (en) 1977-05-31 1977-05-31 Dynamic memory unit

Country Status (1)

Country Link
JP (1) JPS53148347A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2523356A1 (en) * 1982-03-10 1983-09-16 Hitachi Ltd MOS DYNAMIC MEMORY WITH DIRECT ACCESS
JPH01165092A (en) * 1987-12-21 1989-06-29 Nec Ic Microcomput Syst Ltd Semiconductor memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946346A (en) * 1972-09-06 1974-05-02
JPS5024175A (en) * 1973-04-06 1975-03-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946346A (en) * 1972-09-06 1974-05-02
JPS5024175A (en) * 1973-04-06 1975-03-15

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2523356A1 (en) * 1982-03-10 1983-09-16 Hitachi Ltd MOS DYNAMIC MEMORY WITH DIRECT ACCESS
JPH01165092A (en) * 1987-12-21 1989-06-29 Nec Ic Microcomput Syst Ltd Semiconductor memory

Similar Documents

Publication Publication Date Title
EP0136414A3 (en) Dynamic memory with high speed nibble mode
JPS54152931A (en) Semiconductor memory device
JPS5619586A (en) Semiconductor memory unit
JPS6419584A (en) Semiconductor memory device
JPS5668990A (en) Memory circuit
JPS5358736A (en) Input/output control system for mos dynamic random access memory
JPS53148347A (en) Dynamic memory unit
JPS5647996A (en) Semiconductor memory device
JPS5427734A (en) Dynamic semiconductor memory
JPS5668989A (en) Memory circuit
JPS5423337A (en) Semiconductor memory unit
JPS5715286A (en) Memory device
KR850008238A (en) Semiconductor memory
JPS5429936A (en) Pre-amplifier
JPS57130287A (en) Memory circuit
JPS56137580A (en) Semiconductor storage device
JPS5411648A (en) Semiconductor memory unit
JPS57167185A (en) Memory circuit
JPS53148348A (en) Semiconductor dynamic memory unit
JPS54123841A (en) Semiconductor integrated memory element
JPS55125662A (en) Semiconductor integrated circuit
JPS6116098A (en) Semiconductor dynamic memory device
JPS533049A (en) Logical circuit
JPS53142835A (en) Read/write memory circuit
SU410465A1 (en)