JPS53124086A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53124086A
JPS53124086A JP12699375A JP12699375A JPS53124086A JP S53124086 A JPS53124086 A JP S53124086A JP 12699375 A JP12699375 A JP 12699375A JP 12699375 A JP12699375 A JP 12699375A JP S53124086 A JPS53124086 A JP S53124086A
Authority
JP
Japan
Prior art keywords
semiconductor device
base
decrease
concentration region
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12699375A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6124832B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Kentaro Nakamura
Takashi Kiregawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Semiconductor Research Foundation
Original Assignee
Mitsubishi Electric Corp
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Semiconductor Research Foundation filed Critical Mitsubishi Electric Corp
Priority to JP12699375A priority Critical patent/JPS53124086A/ja
Publication of JPS53124086A publication Critical patent/JPS53124086A/ja
Publication of JPS6124832B2 publication Critical patent/JPS6124832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP12699375A 1975-10-21 1975-10-21 Semiconductor device Granted JPS53124086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12699375A JPS53124086A (en) 1975-10-21 1975-10-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12699375A JPS53124086A (en) 1975-10-21 1975-10-21 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP56089818A Division JPS5743475A (en) 1981-06-11 1981-06-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53124086A true JPS53124086A (en) 1978-10-30
JPS6124832B2 JPS6124832B2 (enrdf_load_stackoverflow) 1986-06-12

Family

ID=14948990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12699375A Granted JPS53124086A (en) 1975-10-21 1975-10-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53124086A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (fr) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc Transistor de commutation pour forte puissance
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
US4720735A (en) * 1982-08-31 1988-01-19 Nishizawa Junichi Phototransistor having a non-homogeneously base region
JPH028057U (enrdf_load_stackoverflow) * 1989-06-15 1990-01-18
JPH02187034A (ja) * 1989-01-13 1990-07-23 Nec Corp バイポーラトランジスタ
JPH0718457U (ja) * 1993-12-03 1995-03-31 潤一 西澤 フォトサイリスタ
JP2012244054A (ja) * 2011-05-23 2012-12-10 Shindengen Electric Mfg Co Ltd サイリスタ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4977585A (enrdf_load_stackoverflow) * 1972-11-29 1974-07-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4977585A (enrdf_load_stackoverflow) * 1972-11-29 1974-07-26

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (fr) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc Transistor de commutation pour forte puissance
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
WO1984001054A1 (fr) * 1982-08-30 1984-03-15 Nishizawa Junichi Photothyristor
US4841350A (en) * 1982-08-30 1989-06-20 Nishizawa Junichi Static induction photothyristor having a non-homogeneously doped gate
US4720735A (en) * 1982-08-31 1988-01-19 Nishizawa Junichi Phototransistor having a non-homogeneously base region
JPH02187034A (ja) * 1989-01-13 1990-07-23 Nec Corp バイポーラトランジスタ
JPH028057U (enrdf_load_stackoverflow) * 1989-06-15 1990-01-18
JPH0718457U (ja) * 1993-12-03 1995-03-31 潤一 西澤 フォトサイリスタ
JP2012244054A (ja) * 2011-05-23 2012-12-10 Shindengen Electric Mfg Co Ltd サイリスタ

Also Published As

Publication number Publication date
JPS6124832B2 (enrdf_load_stackoverflow) 1986-06-12

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Legal Events

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Effective date: 20041018

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