JPS53118376A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53118376A
JPS53118376A JP3373177A JP3373177A JPS53118376A JP S53118376 A JPS53118376 A JP S53118376A JP 3373177 A JP3373177 A JP 3373177A JP 3373177 A JP3373177 A JP 3373177A JP S53118376 A JPS53118376 A JP S53118376A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
type region
impurity density
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3373177A
Other languages
English (en)
Other versions
JPS619748B2 (ja
Inventor
Hideto Goto
Haruo Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3373177A priority Critical patent/JPS53118376A/ja
Publication of JPS53118376A publication Critical patent/JPS53118376A/ja
Publication of JPS619748B2 publication Critical patent/JPS619748B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP3373177A 1977-03-25 1977-03-25 Manufacture of semiconductor device Granted JPS53118376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3373177A JPS53118376A (en) 1977-03-25 1977-03-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3373177A JPS53118376A (en) 1977-03-25 1977-03-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53118376A true JPS53118376A (en) 1978-10-16
JPS619748B2 JPS619748B2 (ja) 1986-03-25

Family

ID=12394538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3373177A Granted JPS53118376A (en) 1977-03-25 1977-03-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53118376A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159766A (ja) * 1984-12-31 1986-07-19 Sony Corp 半導体装置の製造方法
JPS62188273A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 半導体装置およびその製造方法
JPS63117467A (ja) * 1986-11-05 1988-05-21 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS63211749A (ja) * 1987-02-27 1988-09-02 Nec Corp 相補型ｍｉｓ半導体集積回路装置の製造方法
JPH01292857A (ja) * 1988-05-20 1989-11-27 Fujitsu Ltd インターライン型固体撮像素子の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH043729Y2 (ja) * 1986-09-10 1992-02-05

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PROJECTED RANGE STATISTICS SEMICONDUCTORS AND RELATED MATERIALS=1975 *
SUPPLEMENT TO THE JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159766A (ja) * 1984-12-31 1986-07-19 Sony Corp 半導体装置の製造方法
JPS62188273A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 半導体装置およびその製造方法
JPH0573068B2 (ja) * 1986-02-13 1993-10-13 Tokyo Shibaura Electric Co
JPS63117467A (ja) * 1986-11-05 1988-05-21 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS63211749A (ja) * 1987-02-27 1988-09-02 Nec Corp 相補型ｍｉｓ半導体集積回路装置の製造方法
JPH01292857A (ja) * 1988-05-20 1989-11-27 Fujitsu Ltd インターライン型固体撮像素子の製造方法

Also Published As

Publication number Publication date
JPS619748B2 (ja) 1986-03-25

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