JPS53116779A - Selective oxidation method of semiconductor - Google Patents

Selective oxidation method of semiconductor

Info

Publication number
JPS53116779A
JPS53116779A JP3110577A JP3110577A JPS53116779A JP S53116779 A JPS53116779 A JP S53116779A JP 3110577 A JP3110577 A JP 3110577A JP 3110577 A JP3110577 A JP 3110577A JP S53116779 A JPS53116779 A JP S53116779A
Authority
JP
Japan
Prior art keywords
semiconductor
oxidation method
selective oxidation
semiconductor substrate
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3110577A
Other languages
English (en)
Japanese (ja)
Other versions
JPS557703B2 (enExample
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3110577A priority Critical patent/JPS53116779A/ja
Publication of JPS53116779A publication Critical patent/JPS53116779A/ja
Publication of JPS557703B2 publication Critical patent/JPS557703B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)
JP3110577A 1977-03-23 1977-03-23 Selective oxidation method of semiconductor Granted JPS53116779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3110577A JPS53116779A (en) 1977-03-23 1977-03-23 Selective oxidation method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3110577A JPS53116779A (en) 1977-03-23 1977-03-23 Selective oxidation method of semiconductor

Publications (2)

Publication Number Publication Date
JPS53116779A true JPS53116779A (en) 1978-10-12
JPS557703B2 JPS557703B2 (enExample) 1980-02-27

Family

ID=12322112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3110577A Granted JPS53116779A (en) 1977-03-23 1977-03-23 Selective oxidation method of semiconductor

Country Status (1)

Country Link
JP (1) JPS53116779A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01147915U (enExample) * 1988-03-30 1989-10-13

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3690945A (en) * 1969-05-07 1972-09-12 Licentia Gmbh Method of producing a transistor with an insulated control electrode
JPS5188179A (en) * 1975-01-31 1976-08-02 cvd honyorusankamakunokeiseihoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3690945A (en) * 1969-05-07 1972-09-12 Licentia Gmbh Method of producing a transistor with an insulated control electrode
JPS5188179A (en) * 1975-01-31 1976-08-02 cvd honyorusankamakunokeiseihoho

Also Published As

Publication number Publication date
JPS557703B2 (enExample) 1980-02-27

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