JPS53116779A - Selective oxidation method of semiconductor - Google Patents
Selective oxidation method of semiconductorInfo
- Publication number
- JPS53116779A JPS53116779A JP3110577A JP3110577A JPS53116779A JP S53116779 A JPS53116779 A JP S53116779A JP 3110577 A JP3110577 A JP 3110577A JP 3110577 A JP3110577 A JP 3110577A JP S53116779 A JPS53116779 A JP S53116779A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- oxidation method
- selective oxidation
- semiconductor substrate
- selective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3110577A JPS53116779A (en) | 1977-03-23 | 1977-03-23 | Selective oxidation method of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3110577A JPS53116779A (en) | 1977-03-23 | 1977-03-23 | Selective oxidation method of semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53116779A true JPS53116779A (en) | 1978-10-12 |
JPS557703B2 JPS557703B2 (ja) | 1980-02-27 |
Family
ID=12322112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3110577A Granted JPS53116779A (en) | 1977-03-23 | 1977-03-23 | Selective oxidation method of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53116779A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01147915U (ja) * | 1988-03-30 | 1989-10-13 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3690945A (en) * | 1969-05-07 | 1972-09-12 | Licentia Gmbh | Method of producing a transistor with an insulated control electrode |
JPS5188179A (en) * | 1975-01-31 | 1976-08-02 | cvd honyorusankamakunokeiseihoho |
-
1977
- 1977-03-23 JP JP3110577A patent/JPS53116779A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3690945A (en) * | 1969-05-07 | 1972-09-12 | Licentia Gmbh | Method of producing a transistor with an insulated control electrode |
JPS5188179A (en) * | 1975-01-31 | 1976-08-02 | cvd honyorusankamakunokeiseihoho |
Also Published As
Publication number | Publication date |
---|---|
JPS557703B2 (ja) | 1980-02-27 |
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