JPS53108776A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53108776A
JPS53108776A JP2359477A JP2359477A JPS53108776A JP S53108776 A JPS53108776 A JP S53108776A JP 2359477 A JP2359477 A JP 2359477A JP 2359477 A JP2359477 A JP 2359477A JP S53108776 A JPS53108776 A JP S53108776A
Authority
JP
Japan
Prior art keywords
region
semiconductor device
conductivity type
polycrystalline
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2359477A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6128236B2 (cg-RX-API-DMAC10.html
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2359477A priority Critical patent/JPS53108776A/ja
Priority to US05/882,766 priority patent/US4227203A/en
Publication of JPS53108776A publication Critical patent/JPS53108776A/ja
Publication of JPS6128236B2 publication Critical patent/JPS6128236B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/171—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10P32/1414—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2359477A 1977-03-04 1977-03-04 Semiconductor device Granted JPS53108776A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2359477A JPS53108776A (en) 1977-03-04 1977-03-04 Semiconductor device
US05/882,766 US4227203A (en) 1977-03-04 1978-03-02 Semiconductor device having a polycrystalline silicon diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2359477A JPS53108776A (en) 1977-03-04 1977-03-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53108776A true JPS53108776A (en) 1978-09-21
JPS6128236B2 JPS6128236B2 (cg-RX-API-DMAC10.html) 1986-06-28

Family

ID=12114903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2359477A Granted JPS53108776A (en) 1977-03-04 1977-03-04 Semiconductor device

Country Status (2)

Country Link
US (1) US4227203A (cg-RX-API-DMAC10.html)
JP (1) JPS53108776A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54156489A (en) * 1978-05-31 1979-12-10 Oki Electric Ind Co Ltd Semiconductor device and its manufacture
JPS558098A (en) * 1978-06-29 1980-01-21 Philips Nv Integrated circuit

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL188721C (nl) * 1978-12-22 1992-09-01 Philips Nv Halfgeleidergeheugenschakeling voor een statisch geheugen.
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device
JPS577959A (en) * 1980-06-19 1982-01-16 Toshiba Corp Semiconductor device
JP3874919B2 (ja) * 1998-02-27 2007-01-31 富士通株式会社 化合物半導体装置
DE69926002T2 (de) 1999-11-17 2006-05-11 Freescale Semiconductor, Inc., Austin Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode
US7244989B2 (en) * 2005-06-02 2007-07-17 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
KR100699865B1 (ko) * 2005-09-28 2007-03-28 삼성전자주식회사 화학기계적 연마를 이용한 자기 정렬 콘택 패드 형성 방법
US9196753B2 (en) 2011-04-19 2015-11-24 Micron Technology, Inc. Select devices including a semiconductive stack having a semiconductive material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443175A (en) * 1967-03-22 1969-05-06 Rca Corp Pn-junction semiconductor with polycrystalline layer on one region
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54156489A (en) * 1978-05-31 1979-12-10 Oki Electric Ind Co Ltd Semiconductor device and its manufacture
JPS558098A (en) * 1978-06-29 1980-01-21 Philips Nv Integrated circuit

Also Published As

Publication number Publication date
US4227203A (en) 1980-10-07
JPS6128236B2 (cg-RX-API-DMAC10.html) 1986-06-28

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