Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP1774477ApriorityCriticalpatent/JPS53103381A/en
Publication of JPS53103381ApublicationCriticalpatent/JPS53103381A/en
PURPOSE: To make the yield of elements more than 80% by making the integrated value of the dislocation density value cm-2 of a substrate and the area value cm2 of an active layer less than 0.20 in compound semiconductor elements.
COPYRIGHT: (C)1978,JPO&Japio
JP1774477A1977-02-221977-02-22Compound semiconductor element
PendingJPS53103381A
(en)