JPS5272585A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5272585A JPS5272585A JP14848775A JP14848775A JPS5272585A JP S5272585 A JPS5272585 A JP S5272585A JP 14848775 A JP14848775 A JP 14848775A JP 14848775 A JP14848775 A JP 14848775A JP S5272585 A JPS5272585 A JP S5272585A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- exuding
- maintaining
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To reduce the concentration of the impurity ions exuding into the element region at the time of field oxidation by implanting ions from a 45° inclined direction and changing the direction of ion beams while maintaining the inclination constant.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14848775A JPS5272585A (en) | 1975-12-15 | 1975-12-15 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14848775A JPS5272585A (en) | 1975-12-15 | 1975-12-15 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5272585A true JPS5272585A (en) | 1977-06-17 |
Family
ID=15453843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14848775A Pending JPS5272585A (en) | 1975-12-15 | 1975-12-15 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5272585A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5478089A (en) * | 1977-12-03 | 1979-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device |
JPS61121470A (en) * | 1984-11-19 | 1986-06-09 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
US5013673A (en) * | 1989-06-30 | 1991-05-07 | Matsushita Electric Industrial Co., Ltd. | Implantation method for uniform trench sidewall doping by scanning velocity correction |
US5223445A (en) * | 1990-05-30 | 1993-06-29 | Matsushita Electric Industrial Co., Ltd. | Large angle ion implantation method |
US5270226A (en) * | 1989-04-03 | 1993-12-14 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method for LDDFETS using oblique ion implantion technique |
US5448090A (en) * | 1994-08-03 | 1995-09-05 | International Business Machines Corporation | Structure for reducing parasitic leakage in a memory array with merged isolation and node trench construction |
JP2007258302A (en) * | 2006-03-22 | 2007-10-04 | Toyota Motor Corp | Semiconductor device and manufacturing method therefor |
-
1975
- 1975-12-15 JP JP14848775A patent/JPS5272585A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5478089A (en) * | 1977-12-03 | 1979-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device |
JPS61121470A (en) * | 1984-11-19 | 1986-06-09 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
US5270226A (en) * | 1989-04-03 | 1993-12-14 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method for LDDFETS using oblique ion implantion technique |
US5013673A (en) * | 1989-06-30 | 1991-05-07 | Matsushita Electric Industrial Co., Ltd. | Implantation method for uniform trench sidewall doping by scanning velocity correction |
US5223445A (en) * | 1990-05-30 | 1993-06-29 | Matsushita Electric Industrial Co., Ltd. | Large angle ion implantation method |
US5448090A (en) * | 1994-08-03 | 1995-09-05 | International Business Machines Corporation | Structure for reducing parasitic leakage in a memory array with merged isolation and node trench construction |
JP2007258302A (en) * | 2006-03-22 | 2007-10-04 | Toyota Motor Corp | Semiconductor device and manufacturing method therefor |
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