JPS5272585A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5272585A
JPS5272585A JP14848775A JP14848775A JPS5272585A JP S5272585 A JPS5272585 A JP S5272585A JP 14848775 A JP14848775 A JP 14848775A JP 14848775 A JP14848775 A JP 14848775A JP S5272585 A JPS5272585 A JP S5272585A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
exuding
maintaining
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14848775A
Other languages
Japanese (ja)
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14848775A priority Critical patent/JPS5272585A/en
Publication of JPS5272585A publication Critical patent/JPS5272585A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To reduce the concentration of the impurity ions exuding into the element region at the time of field oxidation by implanting ions from a 45° inclined direction and changing the direction of ion beams while maintaining the inclination constant.
COPYRIGHT: (C)1977,JPO&Japio
JP14848775A 1975-12-15 1975-12-15 Production of semiconductor device Pending JPS5272585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14848775A JPS5272585A (en) 1975-12-15 1975-12-15 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14848775A JPS5272585A (en) 1975-12-15 1975-12-15 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5272585A true JPS5272585A (en) 1977-06-17

Family

ID=15453843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14848775A Pending JPS5272585A (en) 1975-12-15 1975-12-15 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5272585A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478089A (en) * 1977-12-03 1979-06-21 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS61121470A (en) * 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US5013673A (en) * 1989-06-30 1991-05-07 Matsushita Electric Industrial Co., Ltd. Implantation method for uniform trench sidewall doping by scanning velocity correction
US5223445A (en) * 1990-05-30 1993-06-29 Matsushita Electric Industrial Co., Ltd. Large angle ion implantation method
US5270226A (en) * 1989-04-03 1993-12-14 Matsushita Electric Industrial Co., Ltd. Manufacturing method for LDDFETS using oblique ion implantion technique
US5448090A (en) * 1994-08-03 1995-09-05 International Business Machines Corporation Structure for reducing parasitic leakage in a memory array with merged isolation and node trench construction
JP2007258302A (en) * 2006-03-22 2007-10-04 Toyota Motor Corp Semiconductor device and manufacturing method therefor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478089A (en) * 1977-12-03 1979-06-21 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS61121470A (en) * 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US5270226A (en) * 1989-04-03 1993-12-14 Matsushita Electric Industrial Co., Ltd. Manufacturing method for LDDFETS using oblique ion implantion technique
US5013673A (en) * 1989-06-30 1991-05-07 Matsushita Electric Industrial Co., Ltd. Implantation method for uniform trench sidewall doping by scanning velocity correction
US5223445A (en) * 1990-05-30 1993-06-29 Matsushita Electric Industrial Co., Ltd. Large angle ion implantation method
US5448090A (en) * 1994-08-03 1995-09-05 International Business Machines Corporation Structure for reducing parasitic leakage in a memory array with merged isolation and node trench construction
JP2007258302A (en) * 2006-03-22 2007-10-04 Toyota Motor Corp Semiconductor device and manufacturing method therefor

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