JPS5381067A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5381067A
JPS5381067A JP15837076A JP15837076A JPS5381067A JP S5381067 A JPS5381067 A JP S5381067A JP 15837076 A JP15837076 A JP 15837076A JP 15837076 A JP15837076 A JP 15837076A JP S5381067 A JPS5381067 A JP S5381067A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
films
perfomance
laminating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15837076A
Other languages
Japanese (ja)
Other versions
JPS5952550B2 (en
Inventor
Mikio Takagi
Shuichi Miyamoto
Akira Fujinuma
Hajime Kamioka
Kyoichi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15837076A priority Critical patent/JPS5952550B2/en
Publication of JPS5381067A publication Critical patent/JPS5381067A/en
Publication of JPS5952550B2 publication Critical patent/JPS5952550B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To make possible stable ion implantation and achieve the improvement in perfomance by form films of oxides, high molecular substances, metals, etc. or laminating these as basic mask films.
COPYRIGHT: (C)1978,JPO&Japio
JP15837076A 1976-12-27 1976-12-27 Manufacturing method of semiconductor device Expired JPS5952550B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15837076A JPS5952550B2 (en) 1976-12-27 1976-12-27 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15837076A JPS5952550B2 (en) 1976-12-27 1976-12-27 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5381067A true JPS5381067A (en) 1978-07-18
JPS5952550B2 JPS5952550B2 (en) 1984-12-20

Family

ID=15670201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15837076A Expired JPS5952550B2 (en) 1976-12-27 1976-12-27 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5952550B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128862A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Junction breakdown write-in type semiconductor memory device and method of fabricating the same
JPS5837961A (en) * 1981-08-08 1983-03-05 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド Method of producing monolithic integrated circuit with at least one bipolar planar transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63268380A (en) * 1987-04-25 1988-11-07 Sony Corp Projecting type video display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128862A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Junction breakdown write-in type semiconductor memory device and method of fabricating the same
JPS5837961A (en) * 1981-08-08 1983-03-05 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド Method of producing monolithic integrated circuit with at least one bipolar planar transistor
JPH0361337B2 (en) * 1981-08-08 1991-09-19 Itt

Also Published As

Publication number Publication date
JPS5952550B2 (en) 1984-12-20

Similar Documents

Publication Publication Date Title
JPS5226024A (en) Two-stage combustion process and its equipments
JPS5381067A (en) Production of semiconductor device
JPS51125746A (en) Acyclohexane dione herbicide composition
JPS5249991A (en) Sputtering method
JPS5411682A (en) Semiconductor device
JPS51123637A (en) High speed second time control device for the focal plane shutter
JPS5232557A (en) Supply control device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS5279090A (en) Preparation of powdered soy sauce
JPS5359368A (en) Plasma etching
JPS5232444A (en) Slidable bearing
JPS5272892A (en) Preparation of novel anti-biotic substance bn-165
JPS51128537A (en) Ditchargcl for simultaneons exposure
JPS5391676A (en) Manufacture for semiconductor device
JPS523587A (en) Water and oil repelling agent
JPS53105375A (en) Semiconductor device
JPS52113382A (en) Solvent composition
JPS537686A (en) 6-oxo-2-piperzinylacetic acid and its preparation
JPS5262352A (en) Stabilized high polymer compositions
JPS5315770A (en) Production of semiconductor device
JPS5354489A (en) Production of semiconductor device
JPS51120174A (en) Method of manufacturing semiconductors
JPS5379373A (en) Production of semiconductor device
JPS5420672A (en) Production of semiconductor devices
JPS53120285A (en) Manufacture of semiconductor