JPS5268379A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5268379A JPS5268379A JP14559275A JP14559275A JPS5268379A JP S5268379 A JPS5268379 A JP S5268379A JP 14559275 A JP14559275 A JP 14559275A JP 14559275 A JP14559275 A JP 14559275A JP S5268379 A JPS5268379 A JP S5268379A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- fet
- piercing
- electrodes
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14559275A JPS5268379A (en) | 1975-12-04 | 1975-12-04 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14559275A JPS5268379A (en) | 1975-12-04 | 1975-12-04 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5268379A true JPS5268379A (en) | 1977-06-07 |
Family
ID=15388639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14559275A Pending JPS5268379A (en) | 1975-12-04 | 1975-12-04 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5268379A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5624979A (en) * | 1979-08-08 | 1981-03-10 | Nec Corp | Field effect transistor |
-
1975
- 1975-12-04 JP JP14559275A patent/JPS5268379A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5624979A (en) * | 1979-08-08 | 1981-03-10 | Nec Corp | Field effect transistor |
JPS6228593B2 (ja) * | 1979-08-08 | 1987-06-22 | Nippon Electric Co |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6451665A (en) | Semiconductor device | |
JPS53142196A (en) | Bipolar type semiconductor device | |
JPS5268379A (en) | Semiconductor device | |
JPS54880A (en) | Manufacture of semiconductor device | |
JPS5237766A (en) | Semiconductor device | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS51116675A (en) | Manufacturing method for a semiconductor device | |
JPS5425678A (en) | Field effect transistor of ultra high frequency and high output | |
JPS5588366A (en) | Semiconductor device | |
JPS5362471A (en) | Semiconductor device | |
JPS54121681A (en) | Nis-type semiconductor device | |
JPS5291382A (en) | Insulating gate type field effect transistor | |
JPS5367381A (en) | Semiconductor device | |
JPS5269585A (en) | Semiconductor device | |
JPS51135366A (en) | Method of forming electrode film on silicon semiconductor device | |
JPS5658258A (en) | Semiconductor integrated circuit | |
JPS5211772A (en) | Semiconductor device | |
JPS57197869A (en) | Semiconductor device | |
JPS55148422A (en) | Manufacturing of semiconductor device | |
JPS52144288A (en) | Preparation of electrode in semiconductor device | |
JPS5272186A (en) | Production of mis type semiconductor device | |
JPS53145485A (en) | Production of semiconductor device having serrations on semiconductor surface | |
JPS5286085A (en) | Production of semiconductive device | |
JPS5429561A (en) | Semiconductor device | |
JPS5276877A (en) | Semiconductor device |